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PDF IXFG55N50 Data sheet ( Hoja de datos )
| Número de pieza | IXFG55N50 | |
| Descripción | HiPerFET Power MOSFETs ISOPLUS247 | |
| Fabricantes | IXYS Corporation | |
| Logotipo |  |
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HiPerFETTM Power MOSFETs
ISOPLUS247TM
IXFG 55N50
(Electrically Isolated Back Surface)
VDSS
ID25
RDS(on)
= 500 V
= 48 A
= 90 mΩ
Single Die MOSFET
Symbol
VDSS
V
DGR
VGS
V
GSM
ID25
I
DM
IAR
EAR
E
AS
dv/dt
PD
TJ
TJM
Tstg
TL
VISOL
Md
Weight
Symbol
VDSS
VGS(th)
I
GSS
IDSS
RDS(on)
Test Conditions
TJ = 25°C to 150°C
T
J
=
25°C
to
150°C;
R
GS
=
1
MΩ
Continuous
Transient
TC = 25°C
T
C
=
25°C,
Pulse
width
limited
by
T
JM
TC = 25°C
TC = 25°C
T
C
= 25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
T
J
≤
150°C,
R
G
=
2
Ω
TC = 25°C
1.6 mm (0.063 in.) from case for 10 s
50/60 Hz, RMS t = 1 min
Mounting torque
Maximum Ratings
500 V
500 V
±20 V
±30 V
48 A
220 A
55 A
60 mJ
3J
5 V/ns
400
-40 ... +150
150
-40 ... +150
300
2500
W
°C
°C
°C
°C
V~
0.4/6 Nm/lb-in
5g
Test Conditions
VGS = 0 V, ID = 1mA
VDS = VGS, ID = 8mA
V
GS
=
±20
V,
V
DS
=
0
VDS = VDSS
VGS = 0 V
VGS = 10 V, ID = IT
Note 1
Characteristic Values
(T
J
=
25°C,
unless
otherwise
specified)
min. typ. max.
500 V
2.5 4.5 V
±200 nA
TJ = 25°C
TJ = 125°C
25 µA
2 mA
90 mΩ
ISO264TM
G
D
S
(TAB)
G = Gate
S = Source
D = Drain
Features
z Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
z Low drain to tab capacitance(<50pF)
z Low RDS (on) HDMOSTM process
z Rugged polysilicon gate cell structure
z Unclamped Inductive Switching (UIS)
rated
z Fast intrinsic Rectifier
Applications
z DC-DC converters
z Battery chargers
z Switched-mode and resonant-mode
power supplies
z DC choppers
z AC motor control
Advantages
z Easy assembly
z Space savings
z High power density
www.D© a2t0a03SIhXeYSetA4llUrig.nhtsetreserved
DS99050(05/03)
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet IXFG55N50.PDF ] | |
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