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PDF IXFC14N80P Data sheet ( Hoja de datos )
| Número de pieza | IXFC14N80P | |
| Descripción | PolarHV HiPerFET Power MOSFET ISOPLUS 220 | |
| Fabricantes | IXYS Corporation | |
| Logotipo |  |
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PolarHVTM HiPerFET IXFC 14N80P
Power MOSFET
ISOPLUS 220TM
(Electrically Isolated Tab)
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
V = 800 V
DSS
ID25 =
8A
RDS(on) ≤ 770 mΩ
trr ≤ 250 ns
Symbol
VDSS
VDGR
VGS
VGSM
ID25
I
DM
IAR
EAR
EAS
dv/dt
PD
TJ
T
JM
Tstg
TL
VISOL
FC
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous
Transient
TC = 25°C
T
C
=
25°C,
pulse
width
limited
by
T
JM
TC = 25°C
TC = 25°C
TC = 25°C
I
S
≤
I,
DM
di/dt
≤
100
A/μs,
V
DD
≤
V,
DSS
TJ ≤ 150°C, RG = 5 Ω
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
50/60 Hz, RMS, t = 1, leads-to-tab
Mounting Force
Maximum Ratings
800 V
800 V
±30 V
±40 V
8A
40 A
7A
30 mJ
1.2 J
10 V/ns
130
-55 ... +150
150
-55 ... +150
300
2500
11..65/2.5..15
2
W
°C
°C
°C
°C
V~
N/lb
g
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
BVDSS
VGS = 0 V, ID = 250 μA
Characteristic Values
Min. Typ. Max.
800 V
V
GS(th)
V = V , I = 4 mA
DS GS D
3.0 5.5 V
IGSS VGS = ±30 V, VDS = 0 V
±100 nA
IDSS
VDS = VDSS
VGS = 0 V
TJ = 125°C
25 μA
1 mA
R
DS(on)
V = 10 V, I = 7 A
GS D
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
770 mΩ
ISOPLUS220TM (IXFC)
E153432
G
DS
(Isolated Tab)
G = Gate
S = Source
D = Drain
Features
z Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
z Low drain to tab capacitance(<30pF)
Applications
z DC-DC converters
z Battery chargers
z Switched-mode and resonant-mode
power supplies
z DC choppers
z AC motor control
Advantages
z Easy assembly
z Space savings
z High power density
www©.D20a0t6aISXhYSeeAltl4rigUht.snreesterved
DS99594E(07/06)
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet IXFC14N80P.PDF ] | |
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