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PDF IXFC12N80P Data sheet ( Hoja de datos )
| Número de pieza | IXFC12N80P | |
| Descripción | PolarHV HiPerFET Power MOSFET ISOPLUS220 | |
| Fabricantes | IXYS Corporation | |
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Advance Technical Information
PolarHVTM HiPerFET
Power MOSFET
ISOPLUS220TM
(Electrically Isolated Back Surface)
IXFC 12N80P
VDSS = 800
ID25 =
7
RDS(on) ≤ 0.93
trr ≤ 250
V
A
mΩ
ns
N-Channel Enhancement Mode
Fast Intrinsic Diode
Avalanche Rated
Symbol
Test Conditions
ISOPLUS220TM (IXFC)
Maximum Ratings
E153432
VDSS
VDGR
VGS
VGSM
ID25
IDM
IAR
EAR
EAS
TJ = 25° C to 150° C
TJ = 25° C to 150° C; RGS = 1 MΩ
Continuous
Transient
TC = 25° C
TC = 25° C, pulse width limited by TJM
TC = 25° C
TC = 25° C
TC = 25° C
800
800
± 30
± 40
7
36
6
30
1.0
V
V
V
V
G
DS
A
A
A
mJ
G = Gate
S = Source
J
Isolated back surface
D = Drain
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
VISOL
FC
Weight
IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS,
TJ ≤150° C, RG = 10 Ω
TC = 25° C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
50/60 Hz, RMS, t = 1, leads-to-tab
Mounting Force
Symbol
Test Conditions
(TJ = 25° C unless otherwise specified)
BVDSS
VGS = 0 V, ID = 250 µA
VGS(th)
VDS = VGS, ID = 2.5 mA
IGSS VGS = ±30 V, VDS = 0 V
IDSS
VDS = VDSS
VGS = 0 V
TJ = 125° C
RDS(on)
VGS = 10 V, ID = IT, (Note 1)
Pulse test, t ≤300 µs, duty cycle d ≤ 2 %
10 V/ns
120
-55 ... +150
150
-55 ... +150
300
260
2500
11..65/2.5..15
2
W
°C
°C
°C
°C
°C
V~
N/lb
g
Characteristic Values
Min. Typ. Max.
800 V
3.0 5.5 V
±100 nA
25 µA
750 µA
0.93 mΩ
Features
z Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
z Low drain to tab capacitance(<35pF)
z Low RDS (on) HDMOSTM process
z Rugged polysilicon gate cell structure
z Unclamped Inductive Switching (UIS)
rated
z Fast intrinsic Rectifier
Applications
z DC-DC converters
z Battery chargers
z Switched-mode and resonant-mode
power supplies
z DC choppers
z AC motor control
Advantages
z Easy assembly: no screws, or isolation
foils required
z Space savings
z High power density
z Low collector capacitance to ground
(low EMI)
www©.D20a0t6aISXhYSeeAltl 4rigUht.snreesterved
DS99603E(07/06)
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