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Número de pieza | IXFB170N30P | |
Descripción | Polar Power MOSFET HiPerFET | |
Fabricantes | IXYS Corporation | |
Logotipo | ||
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No Preview Available ! Preliminary Technical Information
PolarTM Power MOSFET
HiPerFETTM
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFB170N30P
VDSS = 300V
ID25
RDS(on)
=
≤
170A
18mΩ
trr ≤ 200ns
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
ILRMS
IDM
IA
EAS
dV/dt
PD
TJ
TJM
Tstg
TL
TSOLD
FC
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C
Leads Current Limit, RMS
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
TC = 25°C
1.6mm (0.062 in.) from case for 10s
Plastic body for 10s
Mounting force
Maximum Ratings
300 V
300 V
±20 V
±30 V
170 A
75 A
500 A
85 A
5J
20
1250
-55 ... +150
150
-55 ... +150
V/ns
W
°C
°C
°C
300 °C
260 °C
30..120/6.7..27
N/lb.
10 g
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
BVDSS
VGS = 0V, ID = 3mA
VGS(th)
VDS = VGS, ID = 1mA
IGSS VGS = ±20V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
TJ = 125°C
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
Characteristic Values
Min. Typ. Max.
300
V
2.5 4.5 V
±200 nA
25 μA
1.5 mA
18 mΩ
PLUS264TM (IXFB)
G
D
S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
• Fast intrinsic diode
• Avalanche Rated
• Unclamped Inductive Switching (UIS)
rated
• Very low Rth results high power
dissipation
•
•
Low
Low
RDS(ON) and QG
package inductance
Advantages
• Low gate charge results in simple
drive requirement
• Improved Gate, Avalanche and
dynamic dv/dt ruggedness
• High power density
Applications
• DC-DC coverters
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• AC and DC motor control
• Uninterrupted power supplies
• High speed power switching
applications
w©w20w08.DIXaYStaCSOhRePeOtR4AUTI.OnNe, tAll rights reserved
DS100000(06/08)
1 page 1.000
0.100
0.010
0.001
0.0001
IXFB170N30P
Fig. 12. Maximum Transient Thermal Impedance
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2008 IXYS CORPORATION, All rights reserved
IXYS REF: F_170N30P(9S) 06-24-08
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet IXFB170N30P.PDF ] |
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IXFB170N30P | Polar Power MOSFET HiPerFET | IXYS Corporation |
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