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IXFB132N50P3のメーカーはIXYS Corporationです、この部品の機能は「Polar3 HiPerFET Power MOSFET」です。 |
部品番号 | IXFB132N50P3 |
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部品説明 | Polar3 HiPerFET Power MOSFET | ||
メーカ | IXYS Corporation | ||
ロゴ | |||
このページの下部にプレビューとIXFB132N50P3ダウンロード(pdfファイル)リンクがあります。 Total 5 pages
Advance Technical Information
Polar3TM HiPerFETTM
Power MOSFET
IXFB132N50P3
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
VDSS =
ID25 =
≤RDS(on)
trr ≤
500V
132A
39mΩ
250ns
PLUS264TM
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
FC
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, Pulse Width Limited by TJM
TC = 25°C
TC = 25°C
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
TC = 25°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Force
Maximum Ratings
500
500
V
V
±30 V
±40 V
132 A
330 A
66 A
3J
35 V/ns
1890
W
-55 ... +150
150
-55 ... +150
300
°C
°C
°C
°C
260 °C
30..120/6.7..27
10
N/lb.
g
G
D
S
Tab
G = Gate
S = Source
D = Drain
Tab = Drain
Features
z Avalanche Rated
z Low Package Inductance
z Fast Intrinsic Rectifier
z Low RDS(on) and QG
Advantages
z Easy to Mount
z Space Savings
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 3mA
VGS(th)
VDS = VGS, ID = 8mA
IGSS VGS = ±30V, VDS = 0V
IDSS VDS = VDSS, VGS = 0V
TJ = 125°C
RDS(on)
VGS = 10V, ID = 0.5 • IDSS, Note 1
Characteristic Values
Min. Typ. Max.
500 V
3.0 5.0 V
±200 nA
50 μA
6 mA
39 mΩ
Applications
z DC-DC Converters
z Battery Chargers
z Switch-Mode and Resonant-Mode
Power Supplies
z Uninterrupted Power Supplies
z AC Motor Drives
z High Speed Power Switching
Applications
w©w20w11.DIXaYStaCSOhRePeOtR4AUTI.OnNe, tAll Rights Reserved
DS100315(03/11)
1 Page IXFB132N50P3
140
120
100
80
60
40
20
0
0
Fig. 1. Output Characteristics @ TJ = 25ºC
VGS = 10V
8V
7V
6V
5V
12345
VDS - Volts
6
Fig. 3. Output Characteristics @ TJ = 125ºC
140
VGS = 10V
120 8V
7V
100
6V
80
60
40
20 5V
4V
0
0 2 4 6 8 10 12
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 66A Value vs.
Drain Current
3.0
VGS = 10V
2.6
TJ = 125ºC
14
2.2
1.8
1.4
TJ = 25ºC
1.0
0.6
0
50 100 150 200 250
ID - Amperes
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
250
VGS = 10V
8V
200
7V
150
100
6V
50
5V
0
0 5 10 15 20
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 66A Value vs.
Junction Temperature
3.2
VGS = 10V
2.8
25
2.4
I D = 132A
2.0
I D = 66A
1.6
1.2
0.8
0.4
-50
140
-25 0
25 50 75 100 125
TJ - Degrees Centigrade
Fig. 6. Maximum Drain Current vs.
Case Temperature
150
120
100
80
60
40
20
0
-50
-25
0 25 50 75 100 125 150
TC - Degrees Centigrade
© 2011 IXYS CORPORATION, All Rights Reserved
3Pages | |||
ページ | 合計 : 5 ページ | ||
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部品番号 | 部品説明 | メーカ |
IXFB132N50P3 | Polar3 HiPerFET Power MOSFET | IXYS Corporation |