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PDF IXFB120N50P2 Data sheet ( Hoja de datos )
| Número de pieza | IXFB120N50P2 | |
| Descripción | PolarP2 HiPerFET Power MOSFET | |
| Fabricantes | IXYS Corporation | |
| Logotipo |  |
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Preliminary Technical Information
PolarP2TM HiPerFETTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFB120N50P2
VDSS =
ID25 =
≤RDS(on)
trr ≤
500V
120A
43mΩ
300ns
PLUS264TM
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
FC
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, Pulse Width Limited by TJM
TC = 25°C
TC = 25°C
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
TC = 25°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Force
Maximum Ratings
500 V
500 V
± 30 V
± 40 V
120 A
300 A
120 A
4J
20 V/ns
1890
W
-55 ... +150
150
-55 ... +150
300
260
°C
°C
°C
°C
°C
30..120/6.7..27
10
N/lb.
g
G
D
S
Tab
G = Gate
S = Source
D = Drain
Tab = Drain
Features
z High Current Handling Capability
z Fast Intrinsic Diode
z Avalanche Rated
z Low RDS(ON)
z Low Package Inductance
Advantages
z Plus 264TM Package for Clip or Spring
Mounting
z High Power Density
z Easy to Mount
z Space Savings
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 3mA
VGS(th)
VDS = VGS, ID = 8mA
IGSS VGS = ± 30V, VDS = 0V
IDSS VDS = VDSS, VGS = 0V
TJ = 125°C
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
Characteristic Values
Min. Typ. Max.
500 V
3.0 5.0 V
± 200 nA
25 μA
2.5 mA
43 mΩ
Applications
z Switch-Mode and Resonant-Mode
Power Supplies
z DC-DC Converters
z Laser Drivers
z AC and DC Motor Drives
z Robotics and Servo Controls
w©w2w010.DIXaYStaCSOhRePeOtR4AUTI.OnNe, tAll Rights Reserved
DS100247A(7/10)
1 page  
IXFB120N50P2
Fig. 13. Maximum Transient Thermal Impedance
0.100
0.010
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2010 IXYS CORPORATION, All Rights Reserved
IXYS REF: F_120N50P2(9S)7-02-10-A
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| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet IXFB120N50P2.PDF ] | |
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