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PDF IXFB100N50P Data sheet ( Hoja de datos )
| Número de pieza | IXFB100N50P | |
| Descripción | PolarHV HiPerFET Power MOSFET | |
| Fabricantes | IXYS Corporation | |
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PolarHVTM HiPerFET IXFB 100N50P
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
VDSS = 500 V
ID25 = 100 A
≤RDS(on) 49 mΩ
trr ≤ 200 ns
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDRMS
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
FC
Weight
Test Conditions
TJ = 25° C to 150° C
TJ = 25° C to 150° C; RGS = 1 MΩ
Continuous
Transient
TC = 25° C
External lead current limit
TC = 25° C, pulse width limited by TJM
TC = 25° C
TC = 25° C
TC = 25° C
IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS,
TJ ≤150° C, RG = 2 Ω
TC = 25° C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting force
Maximum Ratings PLUS264TM (IXFB)
500 V
500 V
±30
±40
100
75
250
100
100
5
20
1250
-55 ... +150
150
-55 ... +150
300
260
30..120/7.5...2.7
10
V
V
A
A
A
A
mJ
J
V/ns
W
°C
°C
°C
°C
°C
N/lb
g
G
D
S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
l International standard packages
l Fast recovery diode
l Unclamped Inductive Switching (UIS)
rated
l Low package inductance
- easy to drive and to protect
Advantages
l Plus 264TM package for clip or spring
l Space savings
l High power density
Symbol
Test Conditions
(TJ = 25° C, unless otherwise specified)
BVDSS
VGS = 0 V, ID = 3 mA
VGS(th)
VDS = VGS, ID = 8 mA
IGSS VGS = ±30 VDC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
TJ = 125° C
RDS(on)
VGS = 10 V, ID = 0.5 ID25, Note 1
Characteristic Values
Min. Typ. Max.
500 V
3.0 5.0 V
±200 nA
25 µA
2000 µA
49 m Ω
www.D© a20t0a6SIXhYeSeAt4ll Urigh.ntseretserved
DS99496E(01/06)
1 page  
1.000
0.100
0.010
0.001
0.0001
IXFB 100N50P
Fig. 13. Maximum Transient Thermal Resistance
0.001
0.01
0.1
1
10
Pulse W idth - Seconds
© 2006 IXYS All rights reserved
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| PDF Descargar | [ Datasheet IXFB100N50P.PDF ] | |
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