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PDF IXFB50N80Q2 Data sheet ( Hoja de datos )
| Número de pieza | IXFB50N80Q2 | |
| Descripción | HiPerFET Power MOSFETs Q-Class | |
| Fabricantes | IXYS Corporation | |
| Logotipo |  |
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HiPerFETTM
Power MOSFETs
Q-Class
IXFB50N80Q2
N-Channel Enhancement Mode
Avalanche Rated, Low Qg, Low Intrinsic RG
High dV/dt, Low trr
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, Pulse Width Limited by TJM
TC = 25°C
TC = 25°C
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
TC = 25°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Maximum Ratings
800 V
800 V
± 30 V
± 40 V
50 A
200 A
50 A
5J
20 V/ns
1135
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300 °C
260 °C
10 g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 1mA
VGS(th)
VDS = VGS, ID = 8mA
IGSS VGS = ± 30V, VDS = 0V
IDSS VDS = VDSS, VGS = 0V
TJ = 125°C
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
Characteristic Values
Min. Typ. Max.
800 V
3.0 5.5 V
± 200 nA
50 µA
3 mA
160 mΩ
VDSS
ID25
RDS(on)
trr
=
=
≤
≤
800V
50A
160mΩ
300ns
PLUS264
G
DS
G = Gate
S = Source
Tab
D = Drain
Tab = Drain
Features
Double Metal Process for Low Gate
Resistance
Avalanche Rated
Low Package Inductance
Fast Intrinsic Rectifier
Advantages
Easy to Mount
Space Savings
High Power Density
Applications
Switch-Mode and Resonant-Mode
Power Supplies >500kHz Switching
DC-DC Converters
DC Choppers
Pulse Generation
Laser Drivers
w©w20w10.DIXYaStaCSOhRePOetR4AUTIO.nNe, Atll Rights Reserved
DS99005D(01/10)
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet IXFB50N80Q2.PDF ] | |
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