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PDF IXFB82N60P Data sheet ( Hoja de datos )
| Número de pieza | IXFB82N60P | |
| Descripción | PolarHV HiPerFET Power MOSFET | |
| Fabricantes | IXYS Corporation | |
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PolarHVTM HiPerFET
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFB 82N60P
V = 600 V
DSS
I = 82 A
D25
≤RDS(on) 75 mΩ
trr ≤ 200 ns
Symbol
VDSS
VDGR
V
GSS
VGSM
ID25
IDRMS
I
DM
IAR
EAR
EAS
dv/dt
P
D
TJ
TJM
T
stg
TL
T
SOLD
FC
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous
Transient
TC = 25°C
External lead current limit
T
C
= 25°C, pulse width limited by
T
JM
TC = 25°C
TC = 25°C
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 2 Ω
T
C
= 25°C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting force
Maximum Ratings PLUS264TM (IXFB)
600 V
600 V
±30
±40
82
75
200
82
100
5
20
1250
-55 ... +150
150
-55 ... +150
300
260
30..120/7.5...2.7
10
V
V
G
D
S
A
A
A G = Gate
A S = Source
D = Drain
TAB = Drain
(TAB)
mJ
J
V/ns
W
°C
°C
°C
Features
z International standard packages
z Fast recovery diode
z Unclamped Inductive Switching (UIS)
rated
z Low package inductance
- easy to drive and to protect
°C
°C Advantages
N/lb z Plus 264TM package for clip or spring
g z Space savings
z High power density
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
BVDSS
VGS = 0 V, ID = 3 mA
Characteristic Values
Min. Typ. Max.
600 V
V
GS(th)
V = V , I = 8 mA
DS GS D
3.0 5.0 V
IGSS VGS = ±30 VDC, VDS = 0
±200 nA
I
DSS
V =V
DS DSS
VGS = 0 V
TJ = 125°C
25 μA
2000 μA
RDS(on)
VGS = 10 V, ID = 0.5 ID25, Note 1
75 mΩ
www.D© a20t0a6SIXhYeSeAt4ll Urigh.ntseretserved
DS99530E(08/06)
1 page  
IXFB 82N60P
1.000
Fig. 13. Maximum Transient Thermal Resistance
0.100
0.010
0.001
0.0001
0.001
0.01
0.1
Pulse W idth - Seconds
1
10
© 2006 IXYS All rights reserved
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| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet IXFB82N60P.PDF ] | |
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