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PDF IRFP450N Data sheet ( Hoja de datos )
| Número de pieza | IRFP450N | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | Vishay Siliconix | |
| Logotipo |  |
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Power MOSFET
IRFP450N, SiHFP450N
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Max.) (Ω)
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
500
VGS = 10 V
77
26
34
Single
0.37
D
TO-247
G
S
D
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
FEATURES
• Low Gate Charge Qg Results in Simple Drive
Requirement
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
• Fully Characterized Capacitance
Avalanche Voltage and Current
• Effective Coss Specified
• Lead (Pb)-free
and
RoHS
COMPLIANT
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• High Speed Power Switching
TYPICAL SMPS TOPOLOGIES
• Two Transistor Forward
• Half Bridge and Full Bridge
• PFC Boost
TO-247
IRFP450NPbF
SiHFP450N-E3
IRFP450N
SiHFP450N
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
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Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
VGS at 10 V
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
TC = 25 °C
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting TJ = 25 °C, L = 1.7 mH, RG = 25 Ω, IAS = 14 A (see fig. 12).
c. ISD ≤ 14 A, dI/dt ≤ 510 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.
d. 1.6 mm from case.
LIMIT
500
± 30
14
8.8
56
1.6
170
14
20
200
5.0
- 55 to + 150
300d
10
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
Document Number: 91232
S-Pending-Rev. b, 26-Jun-08
WORK-IN-PROGRESS
www.vishay.com
1
1 page  
IRFP450N, SiHFP450N
Vishay Siliconix
14
12
10
8
6
4
2
0
25 50 75 100 125 150
TC , Case Temperature ( °C)
Fig. 9 - Maximum Drain Current vs. Case Temperature
1
VDS
VGS
RG
RD
D.U.T.
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
+- VDD
Fig. 10a - Switching Time Test Circuit
VDS
90 %
10 %
VGS
td(on) tr
td(off) tf
Fig. 10b - Switching Time Waveforms
D = 0.50
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0.20
0.1
0.10
0.05
0.02
0.01
0.01
0.00001
PDM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
0.1
Document Number: 91232
S-Pending-Rev. b, 26-Jun-08
www.vishay.com
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRFP450N.PDF ] | |
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