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PDF IXGH48N60A3 Data sheet ( Hoja de datos )
| Número de pieza | IXGH48N60A3 | |
| Descripción | GenX3 600V IGBT | |
| Fabricantes | IXYS Corporation | |
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GenX3TM 600V IGBT
Ultra Low Vsat PT IGBT for
up to 5kHz switching
IXGA48N60A3
IXGH48N60A3
IXGP48N60A3
VCES =
IC110 =
VCE(sat) ≤
600V
48A
1.35V
TO-263 (IXGA)
Symbol
VCES
VCGR
VGES
VGEM
IC110
ICM
SSOA
(RBSOA)
PC
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TC = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1MΩ
Continuous
Transient
TC = 110°C
TC = 25°C, 1ms
VGE = 15V, TVJ = 125°C, RG = 5Ω
Clamped inductive load @ ≤ 600V
TC = 25°C
1.6mm (0.062 in.) from case for 10s
Plastic body for 10 seconds
Mounting torque (TO-247 & TO-220)
TO-247
TO-220
TO-263
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Symbol Test Conditions
(TJ = 25°C unless otherwise specified)
BVCES
VGE(th)
IC = 250μA, VGE = 0V
IC = 250μA, VCE = VGE
ICES
VCE = VCES
VGE = 0V
TJ = 125°C
IGES VCE = 0V, VGE = ± 20V
VCE(sat)
IC = 32A, VGE = 15V, Note 1
Maximum Ratings
600 V
600 V
± 20 V
± 30 V
48
300
ICM = 96
A
A
A
300
-55 ... +150
150
-55 ... +150
300
260
1.13/10
6.0
3.0
2.5
W
°C
°C
°C
°C
°C
Nm/lb.in.
g
g
g
Characteristic Values
Min. Typ. Max.
600 V
3.0 5.0 V
25 μA
250 μA
±100 nA
1.18 1.35 V
G
E
TO-247 (IXGH)
(TAB)
G
CE
TO-220 (IXGP)
(TAB)
GCE
(TAB)
G = Gate
E = Emitter
Features
C = Collector
TAB = Collector
z Optimized for low conduction losses
z International standard packages
Advantages
z High power density
z Low gate drive requirement
Applications
z Power Inverters
z UPS
z Motor Drives
z SMPS
z PFC Circuits
z Battery Chargers
z Welding Machines
z Lamp Ballasts
z Inrush Current Protection Circuits
© 2008 IXYS CORPORATION, All rights reserved
DS99581B(07/08)
1 page  
Fig. 12. Inductive Switching Energy Loss
vs. Gate Resistance
14
I C = 64A
12
7
6
10
Eoff Eon - - - -
8 TJ = 125ºC , VGE = 15V
VCE = 480V
6
I C = 32A
5
4
3
42
21
I C = 16A
00
10 12 14 16 18 20 22 24 26 28 30
RG - Ohms
Fig. 14. Inductive Switching Energy Loss
vs. Junction Temperature
13 6
12 Eoff
Eon - - - -
11 RG = 5Ω , VGE = 15V
10 VCE = 480V
9
I C = 64A
5
4
8
73
6 I C = 32A
52
4
31
2 I C = 16A
10
25 35 45 55 65 75 85 95 105 115 125
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TJ - Degrees Centigrade
Fig. 16. Inductive Turn-off Switching Times
vs. Collector Current
500 650
450
400 TJ = 125ºC
600
550
350
t f td(off) - - - -
300 RG = 5Ω , VGE = 15V
VCE = 480V
250
500
450
400
200
TJ = 25ºC
350
150 300
15 20 25 30 35 40 45 50 55 60 65
IC - Amperes
© 2008 IXYS CORPORATION, All rights reserved
IXGA48N60A3 IXGH48N60A3
IXGP48N60A3
Fig. 13. Inductive Switching Energy Loss vs.
Collector Current
13 6
Eoff Eon - - - -
11 RG = 5Ω , VGE = 15V
VCE = 480V
9
5
4
7
5 TJ = 125ºC
3
2
31
TJ = 25ºC
10
15 20 25 30 35 40 45 50 55 60 65
IC - Amperes
Fig. 15. Inductive Turn-off Switching Times
vs. Gate Resistance
520
t f td(off) - - - -
500 TJ = 125ºC, VGE = 15V
480 VCE = 480V
850
800
750
460
I C = 64A
440
420 16A
700
650
600
400 32A
550
380
360
340
0
16A
32A
64A
3
6
500
450
400
9 12 15 18 21 24 27 30
RG - Ohms
Fig. 17. Inductive Turn-on Switching Times
vs. Junction Temperature
80 28
I C = 64A
70 27
60
tr
td(on) - - - -
26
RG = 5Ω , VGE = 15V
50
VCE = 480V
25
40 24
I C = 32A
30 23
20
I C = 16A
22
10 21
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet IXGH48N60A3.PDF ] | |
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