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PDF IXGH48N60B3 Data sheet ( Hoja de datos )
| Número de pieza | IXGH48N60B3 | |
| Descripción | GenX3 600V IGBT | |
| Fabricantes | IXYS Corporation | |
| Logotipo |  |
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GenX3TM 600V IGBT
Medium speed low Vsat PT
IGBTs 5-40 kHz switching
IXGA48N60B3
IXGP48N60B3
IXGH48N60B3
VCES =
IC110 =
VCE(sat) ≤
600V
48A
1.8V
TO-263 (IXGA)
Symbol
VCES
VCGR
VGES
VGEM
IC110
ICM
SSOA
(RBSOA)
PC
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TC = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1MΩ
Continuous
Transient
TC = 110°C
TC = 25°C, 1ms
VGE = 15V, TVJ = 125°C, RG = 5Ω
Clamped inductive load @ ≤ 600V
TC = 25°C
1.6mm (0.062 in.) from case for 10s
Plastic body for 10 seconds
Mounting torque (TO-247)(TO-220)
TO-263
TO-220
TO-247
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Symbol Test Conditions
(TJ = 25°C unless otherwise specified)
BVCES
VGE(th)
IC = 250μA, VGE = 0V
IC = 250μA, VCE = VGE
ICES
VCE = VCES
VGE = 0V
TJ = 125°C
IGES VCE = 0V, VGE = ± 20V
VCE(sat)
IC = 32A, VGE = 15V, Note 1
Maximum Ratings
600 V
600 V
± 20 V
± 30 V
48
280
ICM = 120
A
A
A
300
-55 ... +150
150
-55 ... +150
300
260
1.13/10
2.5
3.0
6.0
W
°C
°C
°C
°C
°C
Nm/lb.in.
g
g
g
Characteristic Values
Min. Typ. Max.
600 V
3.0 5.0 V
25 μA
250 μA
±100 nA
1.8 V
G
E
TO-220 (IXGP)
(TAB)
GCE
TO-247 (IXGH)
(TAB)
G
CE
(TAB)
G = Gate
E = Emitter
Features
C = Collector
TAB = Collector
z Optimized for low conduction and
switching losses
z Square RBSOA
z International standard packages
Advantages
z High power density
z Low gate drive requirement
Applications
z Power Inverters
z UPS
z Motor Drives
z SMPS
z PFC Circuits
z Battery Chargers
z Welding Machines
z Lamp Ballasts
© 2008 IXYS CORPORATION, All rights reserved
DS99938A(05/08)
1 page  
Fig. 12. Inductive Switching
Energy Loss vs. Gate Resistance
4.5 5.0
4.0 4.5
I C = 60A
3.5 4.0
3.0
2.5 Eoff
Eon - - - -
TJ = 125ºC , VGE = 15V
2.0 VCE = 480V
1.5
3.5
3.0
I C = 30A
2.5
2.0
1.0 1.5
0.5
0.0
0
1.0
I C = 15A
0.5
5 10 15 20 25 30 35 40 45 50 55
RG - Ohms
Fig. 14. Inductive Switching
Energy Loss vs. Junction Temperature
3.5
Eoff Eon - - - -
3.0 RG = 5Ω , VGE = 15V
VCE = 480V
2.5
I C = 60A
3.5
3.0
2.5
2.0 2.0
I C = 30A
1.5 1.5
1.0 1.0
0.5
0.0
25
35
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45 55 65 75 85 95
TJ - Degrees Centigrade
I C = 15A
105 115
0.5
0.0
125
Fig. 16. Inductive Turn-off
Switching Times vs. Collector Current
210
200 t f td(off) - - - -
190 RG = 5Ω , VGE = 15V
VCE = 480V
180
230
220
210
200
170
160 TJ = 125ºC
190
180
150 170
140 160
130 150
120 140
TJ = 25ºC
110 130
100 120
15 20 25 30 35 40 45 50 55 60
IC - Amperes
© 2008 IXYS CORPORATION, All rights reserved
IXGA48N60B3 IXGP48N60B3
IXGH48N60B3
Fig. 13. Inductive Switching
Energy Loss vs. Collector Current
3.5
3.0 Eoff
Eon - - - -
RG = 5Ω , VGE = 15V
2.5 VCE = 480V
TJ = 125ºC
3.5
3.0
2.5
2.0 2.0
1.5 1.5
TJ = 25ºC
1.0 1.0
0.5 0.5
0.0 0.0
15 20 25 30 35 40 45 50 55 60
IC - Amperes
Fig. 15. Inductive Turn-off
Switching Times vs. Junction Temperature
200
190 t f
td(off) - - - -
180
RG = 5Ω , VGE = 15V
VCE = 480V
170
220
210
200
190
160 I C = 60A, 15A
150
180
170
140
130 I C = 30A
160
150
120 140
110 130
I C = 60A, 15A
100 120
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
220
210
200
190
180
170
160
150
140
130
120
0
Fig. 17. Inductive Turn-off
Switching Times vs. Gate Resistance
t f td(off) - - - -
TJ = 125ºC, VGE = 15V
VCE = 480V
I C = 60A
650
600
550
500
450
400
350
I C = 30A
I C = 15A
300
250
200
150
5 10 15 20 25 30 35 40 45 50 55
RG - Ohms
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet IXGH48N60B3.PDF ] | |
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