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PDF IXGA48N60C3 Data sheet ( Hoja de datos )
| Número de pieza | IXGA48N60C3 | |
| Descripción | GenX3 600V IGBT | |
| Fabricantes | IXYS Corporation | |
| Logotipo |  |
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GenX3TM 600V IGBT
High Speed PT IGBTs for
40-100kHz switching
IXGA48N60C3
IXGH48N60C3
IXGP48N60C3
Symbol Test Conditions
VCES
VCGR
VGES
VGEM
IICC12150
ICM
IA
EAS
SSOA
(RBSOA)
TC = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1MΩ
Continuous
Transient
TTCC
=
=
25°C (
110°C
Limited
by
Leads)
TC = 25°C, 1ms
TC = 25°C
TC = 25°C
VGE = 15V, TVJ = 125°C, RG = 3Ω
Clamped Inductive Load @ ≤ 600V
PC TC = 25°C
TJ
TJM
Tstg
TL
TSOLD
Md
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10 Seconds
Mounting Torque (TO-247&TO-220)
Weight TO-247www.DataSheet4U.net
TO-220
TO-263
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
BVCES
IC = 250μA, VGE = 0V
VGE(th)
IC = 250μA, VCE = VGE
ICES
VCE = VCES
VGE = 0V
TJ = 125°C
IGES VCE = 0V, VGE = ± 20V
VCE(sat)
IC = 30A, VGE = 15V, Note 1
TJ = 125°C
Maximum Ratings
600 V
600 V
± 20 V
± 30 V
75
48
250
30
300
ICM = 100
A
A
A
A
mJ
A
300
-55 ... +150
150
-55 ... +150
300
260
1.13/10
6.0
3.0
2.5
W
°C
°C
°C
°C
°C
Nm/lb.in.
g
g
g
Characteristic Values
Min.
Typ. Max.
600 V
3.0 5.5 V
25 μA
250 μA
±100 nA
2.3 2.5 V
1.8 V
© 2009 IXYS CORPORATION, All rights reserved
VCES =
IC110 =
VCE(sat)
tfi(typ)
≤
=
600V
48A
2.5V
38ns
TO-263 (IXGA)
G
E
TO-247 (IXGH)
(TAB)
G
CE
TO-220 (IXGP)
(TAB)
GCE
G = Gate
E = Emitter
Features
(TAB)
C = Collector
TAB = Collector
z Optimized for Low Switching Losses
z Square RBSOA
z Avalanche Rated
z Fast Switching
z International Standard Packages
Advantages
z High Power Density
z Low Gate Drive Requirement
Applications
z High Frequency Power Inverters
z UPS
z Motor Drives
z SMPS
z PFC Circuits
z Battery Chargers
z Welding Machines
z Lamp Ballasts
DS99953A(01/09)
1 page  
Fig. 12. Inductive Switching
Energy Loss vs. Gate Resistance
2.4
Eoff Eon - - - -
2.0 TJ = 125ºC , VGE = 15V
VCE = 400V
1.6 I C = 60A
1.2
2.6
2.2
1.8
1.4
0.8
I C = 30A
1.0
0.4
0.0
0
I C = 15A
0.6
0.2
5 10 15 20 25 30 35
RG - Ohms
Fig. 14. Inductive Swiching
Energy Loss vs. Junction Temperature
2.0
1.8 Eoff
Eon - - - -
1.6
RG = 3Ω , VGE = 15V
VCE = 400V
1.4
I C = 60A
2.0
1.8
1.6
1.4
1.2 1.2
1.0 1.0
0.8 I C = 30A 0.8
0.6 0.6
0.4 0.4
0.2
0.0
25
35
www.DataSheet4U.net
45 55 65 75 85 95
TJ - Degrees Centigrade
0.2
I C = 15A
0.0
105 115 125
Fig. 16. Inductive Turn-off
Switching Times vs. Collector Current
140 110
130
t f td(off) - - - -
105
120 RG = 3Ω , VGE = 15V
100
110
VCE = 400V
95
100
90 TJ = 125ºC
80
90
85
80
70 75
60 70
50 65
40 60
30 TJ = 25ºC
55
20 50
15 20 25 30 35 40 45 50 55 60
IC - Amperes
© 2009 IXYS CORPORATION, All rights reserved
IXGA48N60C3 IXGH48N60C3
IXGP48N60C3
Fig. 13. Inductive Swiching
Energy Loss vs. Collector Current
2.0
1.8 Eoff
Eon - - - -
1.6
RG = 3Ω , VGE = 15V
VCE = 400V
1.4
1.2
1.0 TJ = 125ºC, 25ºC
0.8
0.6
0.4
0.2
0.0
15 20 25 30 35 40 45 50 55
IC - Amperes
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
60
130
125
120
115
110
105
100
95
90
85
80
75
70
0
Fig. 15. Inductive Turn-off
Switching Times vs. Gate Resistance
350
t f td(off) - - - -
TJ = 125ºC, VGE = 15V
VCE = 400V
325
300
275
I C = 60A
250
225
I C = 30A
200
175
I C = 15A
150
125
100
75
50
5 10 15 20 25 30 35
RG - Ohms
Fig. 17. Inductive Turn-off
Switching Times vs. Junction Temperature
160
t f td(off) - - - -
140
RG = 3Ω , VGE = 15V
120
VCE = 400V
120
110
100
100 I C = 60A
90
80
I C = 30A
60
40
I C = 15A
80
70
60
20 50
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet IXGA48N60C3.PDF ] | |
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