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PDF IXGA36N60A3 Data sheet ( Hoja de datos )
| Número de pieza | IXGA36N60A3 | |
| Descripción | GenX3 600V IGBT | |
| Fabricantes | IXYS Corporation | |
| Logotipo |  |
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Preliminary Technical Information
GenX3TM 600V IGBT
Ultra Low Vsat PT IGBT for
up to 5kHz switching
IXGA36N60A3
IXGP36N60A3
IXGH36N60A3
VCES =
IC110 =
VCE(sat) ≤
600V
36A
1.4V
TO-263 (IXGA)
Symbol
VCES
VCGR
VGES
VGEM
IC110
ICM
SSOA
(RBSOA)
PC
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TC = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1MΩ
Continuous
Transient
TC = 110°C
TC = 25°C, 1ms
VGE = 15V, TVJ = 125°C, RG = 5Ω
Clamped inductive load @ ≤ 600V
TC = 25°C
1.6mm (0.062 in.) from case for 10s
Plastic body for 10 seconds
Mounting torque (TO-247 & TO-220)
TO-263
TO-220
TO-247
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Symbol Test Conditions
(TJ = 25°C unless otherwise specified)
BVCES
VGE(th)
IC = 250μA, VGE = 0V
IC = 250μA, VCE = VGE
ICES
VCE = VCES
VGE = 0V
TJ = 125°C
IGES VCE = 0V, VGE = ± 20V
VCE(sat)
IC = 30A, VGE = 15V, Note 1
Maximum Ratings
600 V
600 V
± 20 V
± 30 V
36
200
ICM = 60
A
A
A
220
-55 ... +150
150
-55 ... +150
300
260
1.13/10
2.5
3.0
6.0
W
°C
°C
°C
°C
°C
Nm/lb.in.
g
g
g
Characteristic Values
Min. Typ. Max.
600 V
3.0 5.0 V
25 μA
250 μA
±100 nA
1.4 V
G
E
TO-220 (IXGP)
(TAB)
GCE
TO-247 (IXGH)
(TAB)
G
CE
G = Gate
E = Emitter
(TAB)
C = Collector
TAB = Collector
Features
z Optimized for low conduction losses
z International standard packages
Advantages
z High power density
z Low gate drive requirement
Applications
z Power Inverters
z UPS
z Motor Drives
z SMPS
z PFC Circuits
z Battery Chargers
z Welding Machines
z Lamp Ballasts
z Inrush Current Protection Circuits
© 2008 IXYS CORPORATION, All rights reserved
DS100006(07/08)
1 page  
Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
12 4.0
11 3.6
10
Eoff Eon - - - -
9 TJ = 125ºC , VGE = 15V
8 VCE = 400V
I C = 60A
3.2
2.8
2.4
7 2.0
6
I C = 30A
1.6
5 1.2
4 0.8
3
I C = 15A
0.4
2 0.0
0 10 20 30 40 50 60 70 80 90 100 110 120
RG - Ohms
Fig. 14. Inductive Switching Energy Loss vs.
Collector Current
11
10 Eoff
Eon - - - -
RG = 5Ω , VGE = 15V
9 VCE = 400V
8
2.0
1.8
1.6
1.4
7 1.2
6
TJ = 125ºC
5
4
TJ = 25ºC
1.0
0.8
0.6
3 0.4
2 0.2
1 0.0
15 20 25 30 35 40 45 50 55 60
IC - Amperes
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Fig. 16. Inductive Turn-off Switching Times
vs. Collector Current
850 600
800
t f td(off) - - - -
570
750
RG = 5Ω , VGE = 15V
540
700 VCE = 400V
510
650 480
600
550 TJ = 125ºC
450
420
500 390
450 360
400
350 TJ = 25ºC
330
300
300 270
250 240
15 20 25 30 35 40 45 50 55 60
IC - Amperes
© 2008 IXYS CORPORATION, All rights reserved
IXGA36N60A3 IXGP36N60A3
IXGH36N60A3
Fig. 13. Inductive Switching Energy Loss vs.
Junction Temperature
11 2.0
10 Eoff
Eon - - - -
RG = 5Ω , VGE = 15V
9 VCE = 400V
8
I C = 60A
1.8
1.6
1.4
7 1.2
6
I C = 30A
1.0
5 0.8
4 0.6
3 0.4
2 0.2
I C = 15A
1 0.0
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 15. Inductive Turn-off Switching Times
vs. Gate Resistance
950
900 t f
td(off) - - - -
TJ = 125ºC, VGE = 15V
850 VCE = 400V
800
1300
1200
1100
1000
750 900
700 I C = 60A 800
650 700
600 600
I C = 15A, 30A
550 500
500 400
450
0
300
10 20 30 40 50 60 70 80 90 100 110 120
RG - Ohms
Fig. 17. Inductive Turn-off Switching Times
vs. Junction Temperature
800
750 t f
td(off) - - - -
700
RG = 5Ω , VGE = 15V
VCE = 400V
650
640
600
560
520
600 480
550
`
I C = 15A, 30A, 60A
440
500 400
450 360
400 320
350 280
300 240
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet IXGA36N60A3.PDF ] | |
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