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PDF IXGA30N60C3D4 Data sheet ( Hoja de datos )
| Número de pieza | IXGA30N60C3D4 | |
| Descripción | GenX3 600V IGBT | |
| Fabricantes | IXYS Corporation | |
| Logotipo |  |
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Preliminary Technical Information
GenX3TM 600V IGBT IXGA30N60C3D4
With Diode
IXGP30N60C3D4
High Speed PT IGBTs for
40-100kHz switching
VCES = 600V
IC110 = 30A
VCE(sat)
tfi(typ)
≤
=
3.0V
47ns
Symbol
VCES
VCGR
VGES
VGEM
IC25
IC110
ICM
SSOA
(RBSOA)
PC
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TC = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1MΩ
Continuous
Transient
TC = 25°C
TC = 110°C
TC = 25°C, 1ms
VGE = 15V, TVJ = 125°C, RG = 5Ω
Clamped inductive load @ ≤ 600V
TC = 25°C
1.6mm (0.062 in.) from case for 10s
Plastic body for 10 seconds
Mounting torque (TO-220)
TO-220
TO-263
Maximum Ratings
600 V
600 V
± 20
± 30
V
V
60 A
30 A
150 A
ICM = 60
A
220
-55 ... +150
150
-55 ... +150
300
260
1.13/10
2.5
3.0
W
°C
°C
°C
°C
°C
Nm/lb.in.
g
g
Symbol Test Conditions
(TJ = 25°C unless otherwise specified)
BVCES
IC = 250μA, VGE = 0V
VGE(th)
IC = 250μA, VCE = VGE
ICES VCE = VCES
VGE = 0V
IGES VCE = 0V, VGE = ± 20V
VCE(sat)
IC = 20A, VGE = 15V, Note 1
TJ = 125°C
TJ = 125°C
Characteristic Values
Min. Typ. Max.
600 V
3.5 5.5 V
75 μA
500 μA
±100 nA
2.6 3.0 V
1.8 V
TO-263 (IXGA)
G
E
TO-220 (IXGP)
C(TAB)
GCE
C(TAB)
G = Gate
E = Emitter
C = Collector
TAB = Collector
Features
Optimized for low switching losses
Square RBSOA
Anti-parallel ultra fast diode
International standard packages
Advantages
High power density
Low gate drive requirement
Applications
High Frequency Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
© 2008 IXYS CORPORATION, All rights reserved
DS100073(11/08)
1 page  
Fig. 12. Inductive Switching
Energy Loss vs. Gate Resistance
0.8
Eoff Eon - - - -
0.7 TJ = 125ºC , VGE = 15V
VCE = 300V
0.6
I C = 40A
0.5
1.4
1.2
1.0
0.8
0.4 0.6
0.3
I C = 20A
0.4
0.2 0.2
4 6 8 10 12 14 16 18 20
RG - Ohms
Fig. 14. Inductive Switching
Energy Loss vs. Junction Temperature
0.7 1.4
Eoff Eon - - - -
0.6 RG = 5Ω , VGE = 15V
VCE = 300V
0.5
I C = 40A
0.4
1.2
1.0
0.8
0.3 0.6
0.2 0.4
0.1
I C = 20A
0.2
0 0.0
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
www.DataSheet4U.net
Fig. 16. Inductive Turn-off
Switching Times vs. Collector Current
180
160 t f
td(off) - - - -
RG = 5Ω , VGE = 15V
140 VCE = 300V
110
100
90
120 TJ = 125ºC
100
80
70
80 60
60 50
40
TJ = 25ºC
20
40
30
0 20
10 15 20 25 30 35 40
IC - Amperes
© 2008 IXYS CORPORATION, All rights reserved
IXGA30N60C3D4
IXGP30N60C3D4
Fig. 13. Inductive Switching
Energy Loss vs. Collector Current
0.6
Eoff Eon - - - -
0.5 RG = 5Ω , VGE = 15V
VCE = 300V
0.4
0.3 TJ = 125ºC
1.2
1.0
0.8
0.6
0.2 0.4
0.1
TJ = 25ºC
0.2
0.0 0.0
10 15 20 25 30 35 40
IC - Amperes
Fig. 15. Inductive Turn-off
Switching Times vs. Gate Resistance
180 140
170 t f
td(off) - - - -
160 TJ = 125ºC, VGE = 15V
VCE = 300V
150
130
120
110
140 100
130 I C = 40A 90
120 80
110 70
I C = 20A
100 60
90 50
80 40
4 6 8 10 12 14 16 18 20
RG - Ohms
Fig. 17. Inductive Turn-off
Switching Times vs. Junction Temperature
160
t f td(off) - - - -
140 RG = 5Ω , VGE = 15V
120
VCE = 300V
90
80
70
100
I C = 40A, 20A
80
60
50
60 40
40 30
20 20
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet IXGA30N60C3D4.PDF ] | |
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