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PDF IXGH30N120B3 Data sheet ( Hoja de datos )
| Número de pieza | IXGH30N120B3 | |
| Descripción | GenX3 1200V IGBTs | |
| Fabricantes | IXYS Corporation | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IXGH30N120B3 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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GenX3TM 1200V
IGBTs
High-Speed Low-Vsat PT
IGBTs 3-20 kHz Switching
IXGA30N120B3
IXGP30N120B3
IXGH30N120B3
Symbol Test Conditions
VCES
VCGR
VGES
VGEM
IC25
IICCM110
SSOA
(RBSOA)
TC = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1MΩ
Continuous
Transient
TC = 25°C
TTCC
=
=
110°C
25°C,
1ms
VGE = 15V, TVJ = 125°C, RG = 5Ω
Clamped Inductive Load
PC TC = 25°C
TJ
TJM
Tstg
TL
TSOLD
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10 seconds
Md Mounting Torque (TO-220 & TO-247)
Weight
TO-263
TO-220
TO-247www.DataSheet4U.net
Maximum Ratings
1200
1200
V
V
± 20
± 30
V
V
60 A
30 A
150 A
ICM = 60
VCE ≤ VCES
300
A
W
- 55 ... +150
150
- 55 ... +150
°C
°C
°C
300 °C
260 °C
1.13/10
Nm/lb.in.
2.5 g
3.0 g
6.0 g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVCES
IC = 250μA, VGE = 0V
VGE(th)
IC = 250μA, VCE = VGE
ICES VCE = VCES, VGE = 0V
TJ = 125°C
IGES VCE = 0V, VGE = ±20V
VCE(sat)
IC
=
30A,
VGE
=
15V,
Note
1
TJ
=
125°C
Characteristic Values
Min. Typ. Max.
1200
V
3.0 5.0 V
100 μA
1 mA
±100 nA
2.96
2.95
3.5 V
V
VCES
IC110
VCE(sat)
tfi(typ)
= 1200V
= 30A
≤£ 3.5V
= 204ns
TO-263 (IXGA)
G
E
C (Tab)
TO-220 (IXGP)
GCE
TO-247 (IXGH)
C (Tab)
G
C
E
C (Tab)
G = Gate
E = Emitter
C = Collector
Tab = Collector
Features
z Optimized for Low Conduction and
Switching Losses
z Square RBSOA
z International Standard Packages
Advantages
z High Power Density
z Low Gate Drive Requirement
Applications
z Power Inverters
z UPS
z Motor Drives
z SMPS
z PFC Circuits
z Welding Machines
© 2009 IXYS CORPORATION, All Rights Reserved
DS99730B(10/09)
1 page  
Fig. 12. Inductive Switching
Energy Loss vs. Gate Resistance
18 20
16 Eoff
Eon - - - -
TJ = 125ºC , VGE = 15V
14 VCE = 960V
12
10
I C = 60A
18
16
14
12
8 10
68
I C = 30A
46
24
5 7 9 11 13 15 17 19 21 23 25
RG - Ohms
Fig. 14. Inductive Switching
Energy Loss vs. Junction Temperature
14 16
12
Eoff Eon - - - -
RG = 5Ω , VGE = 15V
10 VCE = 960V
8
I C = 60A
14
12
10
68
46
I C = 30A
24
0
25 35 45
www.DataSheet4U.net
55 65 75 85 95
TJ - Degrees Centigrade
105 115
Fig. 16. Inductive Turn-off
Switching Times vs. Collector Current
450
2
125
400
400 t f
td(off) - - - -
RG = 5Ω , VGE = 15V
350 VCE = 960V
300
250
200
TJ = 125ºC
TJ = 25ºC
350
300
250
200
150
150 100
100 50
15 20 25 30 35 40 45 50 55 60
IC - Amperes
© 2009 IXYS CORPORATION, All Rights Reserved
IXGA30N120B3 IXGP30N120B3
IXGH30N120B3
Fig. 13. Inductive Switching
Energy Loss vs. Collector Current
16
14 Eoff
Eon - - - -
RG = 5Ω , VGE = 15V
12 VCE = 960V
10
TJ = 125ºC
8
6
4
2 TJ = 25ºC
0
15 20 25 30 35 40 45 50 55
IC - Amperes
Fig. 15. Inductive Turn-off
Switching Times vs. Gate Resistance
460
t f td(off) - - - -
420 TJ = 125ºC, VGE = 15V
VCE = 960V
380
I C = 60A
340
16
14
12
10
8
6
4
2
0
60
650
550
450
350
300
I C = 30A
250
260 150
220 50
5 7 9 11 13 15 17 19 21 23 25
RG - Ohms
Fig. 17. Inductive Turn-off
Switching Times vs. Junction Temperature
425
t f td(off) - - - -
375 RG = 5Ω , VGE = 15V
VCE = 960V
325
I C = 60A, 30A
275
280
250
220
190
225 160
175 130
125 100
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet IXGH30N120B3.PDF ] | |
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