PDF IXGH30N60C3 Data sheet ( Hoja de datos )

Número de pieza	IXGH30N60C3
Descripción	GenX3 600V IGBT
Fabricantes	IXYS Corporation
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No Preview Available ! GenX3TM 600V IGBT High Speed PT IGBTs for 40-100kHz switching IXGA30N60C3 IXGP30N60C3 IXGH30N60C3 VCES = 600V IC110 = 30A VCE(sat) tfi(typ) ≤ = 3.0V 47ns TO-263 (IXGA) Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 5Ω Clamped inductive load @ ≤ 600V TC = 25°C 1.6mm (0.062 in.) from case for 10s Plastic body for 10 seconds Mounting torque (TO-220 & TO-247) TO-220 TO-263 TO-263 Maximum Ratings 600 V 600 V ± 20 ± 30 V V 60 A 30 A 150 A ICM = 60 A 220 -55 ... +150 150 -55 ... +150 300 260 1.13/10 2.5 3.0 3.0 W °C °C °C °C °C Nm/lb.in. g g g Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVCES IC = 250μA, VGE = 0V VGE(th) IC = 250μA, VCE = VGE ICES VCE = VCES VGE = 0V TJ = 125°C IGES VCE = 0V, VGE = ± 20V VCE(sat) IC = 20A, VGE = 15V, Note 1 TJ = 125°C Characteristic Values Min. Typ. Max. 600 V 3.5 5.5 V 15 μA 300 μA ±100 nA 2.6 3.0 V 1.8 V © 2008 IXYS CORPORATION, All rights reserved G E TO-220 (IXGP) C(TAB) GCE TO-247 (IXGH) C(TAB) G CE C (TAB) G = Gate E = Emitter C = Collector TAB = Collector Features Optimized for low switching losses Square RBSOA International standard packages Advantages High power density Low gate drive requirement Applications High Frequency Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts DS100012A(11/08) 1 page Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance 0.8 Eoff Eon - - - - 0.7 TJ = 125ºC , VGE = 15V VCE = 300V 0.6 I C = 40A 0.5 1.4 1.2 1.0 0.8 0.4 0.6 0.3 I C = 20A 0.4 0.2 0.2 4 6 8 10 12 14 16 18 20 RG - Ohms Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature 0.7 1.4 Eoff Eon - - - - 0.6 RG = 5Ω , VGE = 15V VCE = 300V 0.5 I C = 40A 0.4 1.2 1.0 0.8 0.3 0.6 0.2 0.4 0.1 I C = 20A 0.2 0 0.0 25 35 45 55 65 75 85 95 105 115 125 TJ - Degrees Centigrade www.DataSheet4U.net Fig. 16. Inductive Turn-off Switching Times vs. Collector Current 180 160 t f td(off) - - - - RG = 5Ω , VGE = 15V 140 VCE = 300V 110 100 90 120 TJ = 125ºC 100 80 70 80 60 60 50 40 TJ = 25ºC 20 40 30 0 20 10 15 20 25 30 35 40 IC - Amperes © 2008 IXYS CORPORATION, All rights reserved IXGA30N60C3 IXGP30N60C3 IXGH30N60C3 Fig. 13. Inductive Switching Energy Loss vs. Collector Current 0.6 Eoff Eon - - - - 0.5 RG = 5Ω , VGE = 15V VCE = 300V 0.4 0.3 TJ = 125ºC 1.2 1.0 0.8 0.6 0.2 0.4 0.1 TJ = 25ºC 0.2 0.0 0.0 10 15 20 25 30 35 40 IC - Amperes Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 180 140 170 t f td(off) - - - - 160 TJ = 125ºC, VGE = 15V VCE = 300V 150 130 120 110 140 100 130 I C = 40A 90 120 80 110 70 I C = 20A 100 60 90 50 80 40 4 6 8 10 12 14 16 18 20 RG - Ohms Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature 160 t f td(off) - - - - 140 RG = 5Ω , VGE = 15V 120 VCE = 300V 90 80 70 100 I C = 40A, 20A 80 60 50 60 40 40 30 20 20 25 35 45 55 65 75 85 95 105 115 125 TJ - Degrees Centigrade 5 Page

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