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IXGP30N60C3 の電気的特性と機能

IXGP30N60C3のメーカーはIXYS Corporationです、この部品の機能は「GenX3 600V IGBT」です。


製品の詳細 ( Datasheet PDF )

部品番号 IXGP30N60C3
部品説明 GenX3 600V IGBT
メーカ IXYS Corporation
ロゴ IXYS Corporation ロゴ 




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IXGP30N60C3 Datasheet, IXGP30N60C3 PDF,ピン配置, 機能
GenX3TM 600V IGBT
High Speed PT IGBTs for
40-100kHz switching
IXGA30N60C3
IXGP30N60C3
IXGH30N60C3
VCES = 600V
IC110 = 30A
VCE(sat)
tfi(typ)
=
3.0V
47ns
TO-263 (IXGA)
Symbol
VCES
VCGR
VGES
VGEM
IC25
IC110
ICM
SSOA
(RBSOA)
PC
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TC = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1MΩ
Continuous
Transient
TC = 25°C
TC = 110°C
TC = 25°C, 1ms
VGE = 15V, TVJ = 125°C, RG = 5Ω
Clamped inductive load @ 600V
TC = 25°C
1.6mm (0.062 in.) from case for 10s
Plastic body for 10 seconds
Mounting torque (TO-220 & TO-247)
TO-220
TO-263
TO-263
Maximum Ratings
600 V
600 V
± 20
± 30
V
V
60 A
30 A
150 A
ICM = 60
A
220
-55 ... +150
150
-55 ... +150
300
260
1.13/10
2.5
3.0
3.0
W
°C
°C
°C
°C
°C
Nm/lb.in.
g
g
g
Symbol Test Conditions
(TJ = 25°C unless otherwise specified)
BVCES
IC = 250μA, VGE = 0V
VGE(th)
IC = 250μA, VCE = VGE
ICES VCE = VCES
VGE = 0V
TJ = 125°C
IGES VCE = 0V, VGE = ± 20V
VCE(sat)
IC = 20A, VGE = 15V, Note 1
TJ = 125°C
Characteristic Values
Min. Typ. Max.
600 V
3.5 5.5 V
15 μA
300 μA
±100 nA
2.6 3.0 V
1.8 V
© 2008 IXYS CORPORATION, All rights reserved
G
E
TO-220 (IXGP)
C(TAB)
GCE
TO-247 (IXGH)
C(TAB)
G
CE
C (TAB)
G = Gate
E = Emitter
C = Collector
TAB = Collector
Features
Optimized for low switching losses
Square RBSOA
International standard packages
Advantages
High power density
Low gate drive requirement
Applications
High Frequency Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
DS100012A(11/08)

1 Page





IXGP30N60C3 pdf, ピン配列
Fig. 1. Output Characteristics
@ 25ºC
40
VGE = 15V
35 13V
30
11V
25
20
9V
15
10
5 7V
0
0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6
VCE - Volts
Fig. 3. Output Characteristics
@ 125ºC
40
VGE = 15V
35 13V
11V
30
25 9V
20
15
10
5 7V
0
0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8
VCE - Volts
www.DataSheet4U.net
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter Voltage
5.5
TJ = 25ºC
5.0
3.2
4.5
I C = 40A
20A
4.0 10A
3.5
3.0
2.5
7 8 9 10 11 12 13 14 15
VGE - Volts
© 2008 IXYS CORPORATION, All rights reserved
IXGA30N60C3 IXGP30N60C3
IXGH30N60C3
180
160
140
120
100
80
60
40
20
0
0
Fig. 2. Extended Output Characteristics
@ 25ºC
VGE = 15V
13V
11V
9V
7V
2 4 6 8 10 12 14 16 18 20
VCE - Volts
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
1.1
VGE = 15V
1.0
I C = 40A
0.9
0.8
I C = 20A
0.7
0.6 I C = 10A
0.5
25
50 75 100 125
TJ - Degrees Centigrade
150
70
60
50
40
30
20
10
0
5
Fig. 6. Input Admittance
TJ = 125ºC
25ºC
- 40ºC
6 7 8 9 10 11
VGE - Volts


3Pages


IXGP30N60C3 電子部品, 半導体
Fig. 18. Inductive Turn-on
Switching Times vs. Gate Resistance
90
80 t r
td(on) - - - -
TJ = 125ºC, VGE = 15V
70 VCE = 300V
30
28
26
60
I C = 40A
24
50 22
40 20
30 18
I C = 20A
20 16
10 14
4 6 8 10 12 14 16 18 20
RG - Ohms
Fig. 20. Inductive Turn-on
Switching Times vs. Junction Temperature
75
70
65
60
55
50
45
40
35
30
25
20
15
25
I C = 40A
I C = 20A
35 45
21
20
t r td(on) - - - -
RG = 5, VGE = 15V
VCE = 300V
19
18
17
16
55 65 75 85 95
TJ - Degrees Centigrade
15
105 115 125
IXGA30N60C3 IXGP30N60C3
IXGH30N60C3
Fig. 19. Inductive Turn-on
Switching Times vs. Collector Current
70 24
t r td(on) - - - -
60 RG = 5, VGE = 15V
VCE = 300V
50
TJ = 125ºC
40
22
20
18
TJ = 25ºC
30 16
20 14
10 12
0 10
10 15 20 25 30 35 40
IC - Amperes
IXYS reserves the right to change limits, test conditions and dimensions.
IXYS REF: G_30N60C3(4D) 7-25-08

6 Page



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