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PDF IXGP24N120C3 Data sheet ( Hoja de datos )
| Número de pieza | IXGP24N120C3 | |
| Descripción | GenX3 1200V IGBT | |
| Fabricantes | IXYS Corporation | |
| Logotipo |  |
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Preliminary Technical Information
GenX3TM 1200V IGBT
High speed PT IGBTs for
10-50kHz Switching
IXGA24N120C3
IXGH24N120C3
IXGP24N120C3
VCES =
IC25
VCE(sat)
=
≤
tfi(typ) =
1200V
48A
4.2V
110ns
Symbol
VCES
V
CGR
V
GES
V
GEM
I
C25
IC100
ICM
IA
E
AS
SSOA
(RBSOA)
PC
TJ
TJM
Tstg
Md
TL
TSOLD
Weight
Test Conditions
TJ = 25°C to 150°C
T
J
=
25°C
to
150°C,
R
GE
=
1MΩ
Continuous
Transient
T
C
= 25°C
TC = 100°C
TC = 25°C, 1ms
TC = 25°C
T = 25°C
C
VGE= 15V, TJ = 125°C, RG = 5Ω
Clamped inductive load @VCE ≤ 1200V
TC = 25°C
Mounting torque
Maximum lead temperature for soldering
1.6mm (0.062 in.) from case for 10s
TO-263
TO-247
TO-220
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Maximum Ratings
1200
1200
V
V
±20 V
±30 V
48 A
24 A
96 A
20 A
250 mJ
ICM = 48
A
250
-55 ... +150
150
-55 ... +150
1.13/10
300
260
2.5
6.0
3.0
W
°C
°C
°C
Nm/lb.in.
°C
°C
g
g
g
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
BV
CES
V
GE(th)
I
C
=
250μA,
V
GE
=
0V
I
C
=
250μA,
V
CE
=
V
GE
ICES
VCE = VCES
VGE = 0V
TJ = 125°C
IGES VCE = 0V, VGE = ±20V
VCE(sat)
IC = 20A, VGE = 15V, Note 2
TJ = 125°C
Characteristic Values
Min. Typ. Max.
1200
2.5
V
5.0 V
100 μA
1.5 mA
±100 nA
3.6 4.2 V
3.1 V
TO-263 (IXGA)
G
E
TO-247 (IXGH)
C (TAB)
G
CE
TO-220 (IXGP)
C (TAB)
GCE
C (TAB)
G = Gate
E = Emitter
C = Collector
TAB = Collector
Features
z International standard packages:
JEDEC TO-247AD
z MOS Gate turn-on
- drive simplicity
z Avalanche rated
Applications
z AC motor speed control
z DC servo and robot drives
z DC choppers
z Uninterruptible power supplies (UPS)
z Switch-mode and resonant-mode
power supplies
© 2008 IXYS CORPORATION, All rights reserved
DS99851A(01/08)
1 page  
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
4
Fig. 12. Inductive Switching
Energy Loss vs. Gate Resistance
Eoff Eon - - - -
TJ = 125ºC , VGE = 15V
VCE = 600V
I C = 20A
I C = 10A
6 8 10 12 14 16 18
RG - Ohms
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
20
Fig. 14. Inductive Switching
Energy Loss vs. Junction Temperature
1.4 2.8
1.2 Eoff
Eon - - - -
RG = 5Ω , VGE = 15V
1.0 VCE = 600V
I C = 20A
2.4
2.0
0.8 1.6
0.6 1.2
0.4 0.8
I C = 10A
0.2 0.4
0.0 0.0
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
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Fig. 16. Inductive Turn-off
Switching Times vs. Collector Current
380 130
340 125
300 120
TJ = 125ºC
260 115
220 t f
td(off) - - - -
180
RG = 5Ω , VGE = 15V
VCE = 600V
140
110
105
100
100 95
60
TJ = 25ºC
90
20 85
10 11 12 13 14 15 16 17 18 19 20
IC - Amperes
© 2008 IXYS CORPORATION, All rights reserved
IXGA24N120C3 IXGH24N120C3
IXGP24N120C3
Fig. 13. Inductive Switching
Energy Loss vs. Collector Current
1.8
1.6 Eoff
Eon - - - -
RG = 5Ω , VGE = 15V
1.4 VCE = 600V
1.2
2.2
2.0
1.8
1.6
1.0 TJ = 125ºC
0.8
1.4
1.2
0.6 1.0
0.4 0.8
0.2 TJ = 25ºC
0.6
0.0 0.4
10 11 12 13 14 15 16 17 18 19 20
IC - Amperes
Fig. 15. Inductive Turn-off
Switching Times vs. Gate Resistance
360 400
340 t f
td(off) - - - -
320
TJ = 125ºC, VGE = 15V
VCE = 600V
300
360
320
280
280 I C = 20A
260
I C = 10A
240
240
200
160
220 120
200 80
4 6 8 10 12 14 16 18 20
RG - Ohms
Fig. 17. Inductive Turn-off
Switching Times vs. Junction Temperature
350 140
t f td(off) - - - -
300 RG = 5Ω , VGE = 15V
VCE = 600V
250
I C = 20A
130
120
200 110
150
I C = 10A
100
100 90
50 80
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet IXGP24N120C3.PDF ] | |
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