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PDF IXGA20N120B3 Data sheet ( Hoja de datos )
| Número de pieza | IXGA20N120B3 | |
| Descripción | GenX3 1200V IGBT | |
| Fabricantes | IXYS Corporation | |
| Logotipo |  |
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Preliminary Technical Information
GenX3TM 1200V IGBT
High Speed Low Vsat PT
IGBTs 3-20 kHz Switching
IXGA20N120B3
IXGP20N120B3
VCES =
IC90
VCE(sat)
=
≤
1200V
20A
3.1V
TO-263 (IXGA)
Symbol
Test Conditions
Maximum Ratings
VCES
VCGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1MΩ
1200
1200
VGES
VGEM
Continuous
Transient
±20
±30
IC25 TC = 25°C
IC90 TC = 90°C
ICM TC = 25°C, 1ms
36
20
80
SSOA
(RBSOA)
VGE= 15V, TJ = 125°C, RG = 15Ω
Clamped Inductive load
ICM = 40
@VCE ≤ 1200
PC TC = 25°C
180
TJ -55 ... +150
TJM 150
Tstg -55 ... +150
FMCd
Mounting Torque (TO-220)
Mounting Force (TO-263)
1.13/10
10..65 / 2.2..14.6
TL
TSOLD
Maximum Lead Temperature for Soldering
1.6mm (0.062 in.) from Case for 10s
300
260
Weight
TO-263
TO-220www.DataSheet4U.net
2.5
3.0
V
V
V
V
A
A
A
A
V
W
°C
°C
°C
Nm/lb.in.
N/lb.
°C
°C
g
g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVCES
VGE(th)
IC = 250μA, VGE = 0V
IC = 250μA, VCE = VGE
ICES VCE = VCES,VGE = 0V
TJ = 125°C
IGES VCE = 0V, VGE = ±20V
VCE(sat)
IC = 16A, VGE = 15V, Note 2
TJ = 125°C
Characteristic Values
Min. Typ. Max.
1200
2.5
V
5.0 V
25 μA
1 mA
±100 nA
2.7 3.1 V
2.8 V
G
E
TO-220 (IXGP)
C (TAB)
GCE
C (TAB)
G = Gate
E = Emitter
C = Collector
TAB = Collector
Features
z Optimized for Low Conduction and
Switching Losses
z Square RBSOA
z International Standard Packages
Advantages
z High Power Density
z Low Gate Drive Requirement
Applications
z Power Inverters
z UPS
z Motor Drives
z SMPS
z PFC Circuits
z Welding Machines
z Inductive Heating
© 2009 IXYS CORPORATION, All Rights Reserved
DS100126(03/09)
1 page  
Fig. 12. Inductive Switching
Energy Loss vs. Gate Resistance
3.2
3.0 Eoff
Eon - - - -
2.8 TJ = 125ºC , VGE = 15V
VCE = 600V
2.6
2.4
I C = 32A
2.2
2.0
1.8
1.6 I C = 16A
1.4
1.2
10 20 30 40 50 60 70 80
RG - Ohms
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
90
Fig. 14. Inductive Switching
Energy Loss vs. Junction Temperature
3.0
Eoff Eon - - - -
2.5 RG = 15Ω , VGE = 15V
VCE = 600V
2.0
1.5
1.0
I C = 32A
I C = 16A
4.8
4.4
4.0
3.6
3.2
2.8
2.4
2.0
1.6
1.2
0.5 0.8
0.4
0.0 0.0
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
www.DataSheet4U.net
Fig. 16. Inductive Turn-off
Switching Times vs. Collector Current
800 260
700 t f i td(off) - - - - 240
RG = 15Ω , VGE = 15V
600
VCE = 600V
220
500 TJ = 125ºC
400
200
180
300
200 TJ = 25ºC
160
140
100 120
0 100
10 12 14 16 18 20 22 24 26 28 30 32
IC - Amperes
© 2009 IXYS CORPORATION, All Rights Reserved
IXGA30N120B3
IXGP30N120B3
Fig. 13. Inductive Switching
Energy Loss vs. Collector Current
3.2
2.8 Eoff
Eon - - - -
RG = 15Ω , VGE = 15V
2.4 VCE = 600V
TJ = 125ºC
2.0
4.0
3.5
3.0
2.5
1.6 2.0
1.2 1.5
TJ = 25ºC
0.8 1.0
0.4 0.5
0.0 0.0
10 12 14 16 18 20 22 24 26 28 30 32
IC - Amperes
Fig. 15. Inductive Turn-off
Switching Times vs. Gate Resistance
800 600
t f i td(off) - - - -
700 TJ = 125ºC, VGE = 15V
VCE = 600V
600
500
400
500 I C = 32A
300
400 I C = 16A
200
300 100
200 0
10 20 30 40 50 60 70 80 90
RG - Ohms
Fig. 17. Inductive Turn-off
Switching Times vs. Junction Temperature
800 240
700 t f i
td(off) - - - -
RG = 15Ω , VGE = 15V
600
VCE = 600V
220
200
500
I C = 16A
400
180
160
300
200 I C = 32A
140
120
100 100
0 80
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet IXGA20N120B3.PDF ] | |
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