|
|
PDF IXGH16N60B2D1 Data sheet ( Hoja de datos )
| Número de pieza | IXGH16N60B2D1 | |
| Descripción | HiPerFAST IGBTs | |
| Fabricantes | IXYS Corporation | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de IXGH16N60B2D1 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
|
No Preview Available !
HiPerFASTTM IGBTs
B2-Class High Speed
w/ Diode
IXGA16N60B2D1
IXGP16N60B2D1
IXGH16N60B2D1
Symbol
Test Conditions
Maximum Ratings
VCES
VCGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1MΩ
600
600
VGES
VGEM
Continuous
Transient
±20
±30
IC25 TC = 25°C
IC110
IF110
TTCC
= 110°C
= 110°C
ICM TC = 25°C, 1ms
40
16
11
100
SSOA
(RBSOA)
VGE= 15V, TJ = 125°C, RG = 22Ω
Clamped Inductive load
ICM = 32
VCE ≤ VCES
PC TC = 25°C
150
TJ -55 ... +150
TJM 150
Tstg -55 ... +150
Md Mounting Torque (TO-220 & TO-247)
1.13/10
FC Mounting Force (TO-263)
10..65 / 2.2..14.6
TL Maximum Lead Temperature for Soldering
TSOLD www.DataSheet4U.net 1.6mm (0.062 in.) from Case for 10s
300
260
Weight
TO-263
TO-220
TO-247
2.5
3.0
6.0
V
V
V
V
A
A
A
A
A
W
°C
°C
°C
Nm/lb.in.
N/lb.
°C
°C
g
g
g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
VGE(th)
IC = 250μA, VCE = VGE
ICES VCE = VCES,VGE = 0V
TJ = 125°C
IGES VCE = 0V, VGE = ±20V
VCE(sat)
IC = 12A, VGE = 15V, Note1
TJ = 125°C
Characteristic Values
Min. Typ. Max.
3.0 5.5 V
25 μA
1 mA
±100 nA
2.30 V
1.65 V
© 2010 IXYS CORPORATION, All Rights Reserved
VCES =
IC110
VCE(sat)
=
≤
tfi(typ) =
600V
16A
2.3V
70ns
TO-263 AA (IXGA)
G
E
C (Tab)
TO-220AB (IXGP)
GC E
TO-247 (IXGH)
C (Tab)
G
DC SE
C (Tab)
G = Gate
E = Emitter
C = Collector
Tab = Collector
Features
z Optimized for Low Conduction and
Switching Losses
z Square RBSOA
z Anti-Parallel Ultra Fast Diode
z International Standard Packages
Advantages
z High Power Density
z Low Gate Drive Requirement
Applications
z Power Inverters
z UPS
z Motor Drives
z SMPS
z PFC Circuits
z Battery Chargers
z Welding Machines
z Lamp Ballasts
DS99178B(08/10)
1 page  
IXGA16N60B2D1 IXGP16N60B2D1
IXGH16N60B2D1
Fig. 7. Transconductance
18
16 TJ = - 40ºC
14
25ºC
12
125ºC
10
8
6
4
2
0
0 5 10 15 20 25 30 35
IC - Amperes
16
14
VCE = 300V
I C = 12A
12 I G = 10mA
10
8
6
4
2
0
05
Fig. 8. Gate Charge
10 15
QG - NanoCoulombs
20
25
10,000
f = 1 MHz
Fig. 9. Capacitance
Fig. 10. Reverse-Bias Safe Operating Area
35
30
1,000
Cies
25
20
100 Coes
10
0
5
www.DataSheet4U.net
Cres
10 15 20 25 30 35 40
VCE - Volts
15
10
TJ = 125ºC
5 RG = 22Ω
dv / dt < 10V / ns
0
100 150 200 250 300 350 400 450 500 550 600 650
VCE - Volts
Fig. 11. Maximum Transient Thermal Impedance
1
0.1
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2010 IXYS CORPORATION, All Rights Reserved
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet IXGH16N60B2D1.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| IXGH16N60B2D1 | HiPerFAST IGBTs | IXYS Corporation |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |