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PDF IXGP16N60B2 Data sheet ( Hoja de datos )
| Número de pieza | IXGP16N60B2 | |
| Descripción | HiPerFAST IGBTs B2-Class High Speed | |
| Fabricantes | IXYS Corporation | |
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HiPerFASTTM IGBTs
B2-Class High Speed
IXGA16N60B2
IXGP16N60B2
VCES =
IC110
VCE(sat)
=
≤
tfi(typ) =
600V
16A
2.3V
70ns
Symbol
Test Conditions
Maximum Ratings
VCES
VCGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1MΩ
600
600
VGES
VGEM
Continuous
Transient
±20
±30
IC25 TC = 25°C
IC110
TC = 110°C
ICM TC = 25°C, 1ms
40
16
100
SSOA
(RBSOA)
VGE= 15V, TJ = 125°C, RG = 22Ω
Clamped Inductive load
ICM = 32
VCE ≤ VCES
PC TC = 25°C
150
TJ -55 ... +150
TJM 150
Tstg -55 ... +150
Md Mounting Torque (TO-220)
FC Mounting Force (TO-263)
1.13/10
10..65 / 2.2..14.6
TL
TSOLD
Maximum Lead Temperature for Soldering
1.6mm (0.062 in.) from Case for 10s
300
260
Weight
TO-263
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TO-220
2.5
3.0
V
V
V
V
A
A
A
A
W
°C
°C
°C
Nm/lb.in.
N/lb.
°C
°C
g
g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
VGE(th)
IC = 250μA, VCE = VGE
ICES VCE = VCES,VGE = 0V
TJ = 125°C
IGES VCE = 0V, VGE = ±20V
VCE(sat)
IC = 12A, VGE = 15V, Note1
TJ = 125°C
Characteristic Values
Min. Typ. Max.
3.0 5.5 V
15 μA
250 μA
±100 nA
2.30 V
1.65 V
TO-263 AA (IXGA)
G
E
C (Tab)
TO-220AB (IXGP)
GC E
C (Tab)
G = Gate
E = Emitter
C = Collector
Tab = Collector
Features
z Optimized for Low Conduction and
Switching Losses
z Square RBSOA
z International Standard Packages
Advantages
z High Power Density
z Low Gate Drive Requirement
Applications
z Power Inverters
z UPS
z Motor Drives
z SMPS
z PFC Circuits
z Battery Chargers
z Welding Machines
z Lamp Ballasts
© 2010 IXYS CORPORATION, All Rights Reserved
DS99141B(08/10)
1 page  
Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
1.2 1.1
1.1 Eoff
Eon - - - -
1.0 TJ = 125ºC , VGE = 15V
VCE = 400V
0.9
0.8
I C = 24A
1.0
0.9
0.8
0.7
0.7 0.6
0.6 0.5
0.5 0.4
0.4
I C = 12A
0.3
0.3 0.2
0.2 0.1
20 30 40 50 60 70 80 90 100
RG - Ohms
Fig. 14. Inductive Switching Energy Loss vs.
Junction Temperature
1
0.9 Eoff
Eon - - - -
0.8
RG = 22Ω , VGE = 15V
VCE = 400V
0.7
1
0.9
0.8
0.7
0.6
I C = 24A
0.5
0.6
0.5
0.4 0.4
0.3 0.3
0.2
0.1 I C = 12A
0.2
0.1
00
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
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Fig. 16. Inductive Turn-off Switching Times vs.
Collector Current
200 200
180 t f i
td(off) - - - -
RG = 22Ω , VGE = 15V
160 VCE = 400V
180
160
140 140
120 TJ = 125ºC
120
100 100
80
60 TJ = 25ºC
80
60
40 40
12 13 14 15 16 17 18 19 20 21 22 23 24
IC - Amperes
© 2010 IXYS CORPORATION, All Rights Reserved
IXGA16N60B2
IXGP16N60B2
Fig. 13. Inductive Switching Energy Loss vs.
Collector Current
11
0.9 Eoff
Eon - - - -
0.8 RG = 22Ω , VGE = 15V
VCE = 400V
0.7
0.9
0.8
0.7
0.6 0.6
0.5
TJ = 125ºC
0.5
0.4 0.4
0.3 0.3
0.2
TJ = 25ºC
0.2
0.1 0.1
00
12 13 14 15 16 17 18 19 20 21 22 23 24
IC - Amperes
Fig. 15. Inductive Turn-off Switching Times vs.
Gate Resistance
190 330
180 t f i
td(off) - - - -
TJ = 125ºC, VGE = 15V
170 VCE = 400V
300
270
160 240
150
I C = 24A
140
210
180
130
I C = 12A
150
120 120
110 90
100 60
20 30 40 50 60 70 80 90 100
RG - Ohms
Fig. 17. Inductive Turn-off Switching Times vs.
Junction Temperature
180 180
160
t f i td(on) - - - -
RG = 22Ω , VGE = 15V
140 VCE = 400V
160
140
120
I C = 24A, 12A
100
120
100
80 80
60 60
40 40
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet IXGP16N60B2.PDF ] | |
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