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PDF IXGH12N120A3 Data sheet ( Hoja de datos )
| Número de pieza | IXGH12N120A3 | |
| Descripción | GenX3 1200V IGBTs | |
| Fabricantes | IXYS Corporation | |
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GenX3TM 1200V
IGBTs
High Surge Current
Ultra-Low Vsat PT IGBTs for
up to 3kHz Switching
IXGA12N120A3
IXGP12N120A3
IXGH12N120A3
Symbol
Test Conditions
Maximum Ratings
VCES
VCGR
VGES
VGEM
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1MΩ
Continuous
Transient
1200
1200
±20
±30
V
V
V
V
IC25 TC = 25°C
IC90 TC = 90°C
ICM TC = 25°C, 1ms
22 A
12 A
60 A
SSOA
(RBSOA)
VGE = 15V, TVJ = 125°C, RG = 10Ω
Clamped Inductive Load
ICM = 24
≤VCE 0.8 • VCES
PC TC = 25°C
100
TJ -55 ... +150
TJM 150
Tstg -55 ... +150
TL
TSOLD
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
300
260
FC Mounting Force (TO-263)
10..65 / 2.2..14.6
Md Mounting Torque (TO-220 & TO-247)
1.13 / 10
Weight
TO-263
2.5
TO-220www.DataSheet4U.net
3.0
TO-247
6.0
A
W
°C
°C
°C
°C
°C
N/lb.
Nm/lb.in.
g
g
g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified
BVCES
IC = 250μA, VGE = 0V
VGE(th)
IC = 250μA, VCE = VGE
ICES VCE = VCES, VGE = 0V
TJ = 125°C
IGES VCE = 0V, VGE = ±20V
VCE(sat)
IC = IC90, VGE = 15V, Note 1
TJ = 125°C
Characteristic Values
Min. Typ. Max.
1200
V
2.5 5.0 V
10 μA
275 μA
±100 nA
2.40
2.75
3.0 V
V
VCES =
IC90 =
V ≤CE(sat)
1200V
12A
3.0V
TO-263 AA (IXGA)
G
S
D (Tab)
TO-220AB (IXGP)
GD S
TO-247 (IXGH)
D (Tab)
G
DS
D (Tab)
G = Gate
S = Source
D = Drain
Tab = Drain
Features
z Optimized for Low Conduction Losses
z International Standard Packages
Advantages
z High Power Density
z Low Gate Drive Requirement
Applications
z Power Inverters
z UPS
z Motor Drives
z SMPS
z PFC Circuits
z Battery Chargers
z Welding Machines
z Lamp Ballasts
z Inrush Current Protection Circuits
© 2010 IXYS CORPORATION, All Rights Reserved
DS100212B(11/10)
1 page  
Fig. 12. Resistive Turn-on Rise Time
vs. Junction Temperature
240
RG = 10Ω , VGE = 15V
220 VCE = 960V
200
I C = 24A
180
160
I C = 12A
140
120
100
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 14. Resistive Turn-on Switching Times
vs. Gate Resistance
260
t r td(on) - - - -
240 TJ = 125ºC, VGE = 15V
VCE = 960V
220
140
120
100
200 I C = 24A
80
I C = 12A
180 60
160 40
140
0
30 60
90 120 150 180 210 240 270
RG - Ohms
www.DataSheet4U.net
Fig. 16. Resistive Turn-off Switching Times
vs. Collector Current
2200
20
300
110
2000
1800
1600
TJ = 125ºC
t f td(off) - - - -
RG = 10Ω, VGE = 15V
VCE = 960V
100
90
80
1400
1200 TJ = 25ºC
70
60
1000
50
800 40
600
6
30
8 10 12 14 16 18 20 22 24
IC - Amperes
IXGA12N120A3 IXGP12N120A3
IXGH12N120A3
Fig. 13. Resistive Turn-on Rise Time
vs. Collector Current
240
220
RG = 10Ω , VGE = 15V
VCE = 960V
200
TJ = 125ºC
180
160
140 TJ = 25ºC
120
100
6
8 10 12 14 16 18 20 22 24
IC - Amperes
Fig. 15. Resistive Turn-off Switching Times
vs. Junction Temperature
1600
1500
1400
t f td(off) - - - -
RG = 10Ω, VGE = 15V
VCE = 960V
100
90
80
1300
1200
I C = 12A
70
60
1100
1000
I C = 24A
50
40
900 30
800 20
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 17. Resistive Turn-off Switching Times
vs. Gate Resistance
1800
1700
1600
t f td(off) - - - -
TJ = 125ºC, VGE = 15V
VCE = 960V
I C = 12A
1500
1400
1300
I C = 24A
700
600
500
400
300
200
1200
100
1100
0
0 30 60 90 120 150 180 210 240 270 300
RG - Ohms
© 2010 IXYS CORPORATION, All Rights Reserved
IXYS REF: G_12N120A3(2M)02-11-10
5 Page | ||
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| PDF Descargar | [ Datasheet IXGH12N120A3.PDF ] | |
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