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PDF IXGA12N120A2 Data sheet ( Hoja de datos )

Número de pieza IXGA12N120A2
Descripción IGBT Optimized
Fabricantes IXYS Corporation 
Logotipo IXYS Corporation Logotipo



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No Preview Available ! IXGA12N120A2 Hoja de datos, Descripción, Manual

IGBT
Optimized for
switching up to 5KHz
Preliminary data sheet
IXGA 12N120A2
IXGP 12N120A2
VCES
IC25
VCE(sat)
= 1200 V
= 24 A
= 3.0 V
Symbol
Test Conditions
VCES
VCGR
VGES
VGEM
IC25
IC90
ICM
SSOA
(RBSOA)
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 M
Continuous
Transient
TC = 25°C
TC = 90°C
TC = 25°C, 1 ms
VGE = 15 V, TVJ = 125°C, RG = 100
Clamped inductive load
PC TC = 25°C
TJ
TJM
Tstg
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Md
Weightwww.DataSheet4U.net
Mounting torque with screw M3
Mounting torque with screw M3.5
TO-220
TO-263
Maximum Ratings
1200
1200
V
V
±20 V
±30 V
24 A
12 A
48 A
ICM = 24
@ 0.8 VCES
75
A
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300 °C
0.45/4 Nm/lb.in.
0.55/5 Nm/lb.in.
4g
2g
TO-220AB (IXGP)
GCE
TO-263 AA (IXGA)
G
E
C (TAB)
Features
International standard packages
JEDEC TO-220AB and TO-263AA
Low VCE(sat)
- for minimum on-state conduction
losses
MOS Gate turn-on
- drive simplicity
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
BVCES
VGE(th)
IC = 250 µA, VGE = 0 V
IC = 250 µA, VCE = VGE
ICES
VCE = VCES
VGE = 0 V
IGES VCE = 0 V, VGE = ±20 V
VCE(sat)
IC = IC90, VGE = 15V
Characteristic Values
Min. Typ. Max.
1200
2.5
V
5.0 V
TJ = 25°C
TJ = 125°C
25
250
±100
2.4 3.0
µA
µA
nA
V
Applications
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
Capacitor discharge
Advantages
Easy to mount with one screw
Reduces assembly time and cost
High power density
© 2004 IXYS All rights reserved
DS99199(8/04)

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IXGA12N120A2 pdf
Fig. 13. Gate Charge
16
14 VCE = 600V
12 I C = 12A
I G = 10mA
10
8
6
4
2
0
0 2 4 6 8 10 12 14 16 18 20 22 24
Q G - nanoCoulombs
IXGA12N120A2
IXGP12N120A2
Fig. 14. Reverse-Bias Safe
Operating Area
30
25
20
15
10 TJ = 125ºC
5 RG = 100
dV/dT < 10V/ns
0
100 300 500 700 900
VC E - Volts
1100 1300
1000
Fig. 15. Capacitance
Cies
100
Coes
10
Cres
1
0
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f = 1 MHz
5 10
10.00
15 20 25 30 35 40
VC E - Volts
Fig. 17. Maxim um Transient Therm al Resistance
1.00
0.10
0.1
© 2004 IXYS All rights reserved
1
10
Pulse Width - milliseconds
100
1000

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