|
|
PDF IXFZ520N075T2 Data sheet ( Hoja de datos )
| Número de pieza | IXFZ520N075T2 | |
| Descripción | TrenchT2 GigaMOS HiperFET Power MOSFET | |
| Fabricantes | IXYS Corporation | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de IXFZ520N075T2 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
|
No Preview Available !
Advance Technical Information
TrenchT2TM GigaMOSTM
HiperFETTM
Power MOSFET
IXFZ520N075T2
VDSS =
ID25 =
RDS(on) ≤
75V
465A
1.3mΩ
(Electrically Isolated Tab)
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
Test Conditions
VDSS
VDGR
VGSS
VGSM
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGS = 1MΩ
Continuous
Transient
ID25 TC = 25°C
IDM TC = 25°C, Pulse Width Limited by TJM
IA TC = 25°C
EAS TC = 25°C
PD TC = 25°C
TJ
TJM
Tstg
VISOL
50/60 Hz, RMS
IISOL ≤ 1mA
t = 1 minute
t = 1 second
TL
TSOLD
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
V 50/60 Hz, 1 MinuteISOL www.DataSheet4U.net
FC
Weight
Mounting Force
Maximum Ratings
75
75
V
V
±20
±30
465
1560
200
3
V
V
A
A
A
J
600 W
-55 ... +175
175
-55 ... +175
2500
3000
°C
°C
°C
V~
V~
300
260
2500
°C
°C
V~
20..120 / 4.5..27
3
N/lb.
g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 3mA
VGS(th)
VDS = VGS, ID = 8mA
IGSS VGS = ±20V, VDS = 0V
IDSS VDS = VDSS, VGS = 0V
TJ = 150°C
RDS(on)
VGS = 10V, ID = 100A, Note 1
Characteristic Values
Min.
Typ. Max.
75 V
2.0 4.0 V
±200 nA
10 μA
1.5 mA
1.3 mΩ
DE475
D
D
D
G
S
S
Isolated Tab
G = Gate
D = Drain
S = Source
Features
z Silicon Chip on Direct-Copper Bond
(DCB) Substrate
z Isolated Substrate
- Excellent Thermal Transfer
- Increased Temperature and Power
Cycling Capability
- High Isolation Voltage (2500V~)
z 175°C Operating Temperature
z Very High Current Handling
Capability
z Fast Intrinsic Diode
z Avalanche Rated
z Very Low RDS(on)
Advantages
z Easy to Mount
z Space Savings
z High Power Density
Applications
z DC-DC Converters and Off-Line UPS
z Primary-Side Switch
z High Speed Power Switching
Applications
© 2010 IXYS CORPORATION, All Rights Reserved
DS100250(03/10)
1 page  
IXFZ520N075T2
Fig. 13. Resistive Turn-on Rise Time vs.
Junction Temperature
180
160 RG = 1Ω , VGS = 10V
VDS = 37.5V
140
120
I D = 200A
100
80
60
I D = 100A
40
20
0
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 15. Resistive Turn-on Switching Times vs.
Gate Resistance
600 240
t r td(on) - - - -
500 TJ = 125ºC, VGS = 10V
VDS = 37.5V
I D = 200A
200
400 160
300 120
I D = 100A
200 80
100 40
00
1 2 3 4 5 6 7 8 9 10
RG - Ohms
www.DataSheet4U.net
Fig. 17. Resistive Turn-off Switching Times vs.
Drain Current
46
180
t f td(off) - - - -
44
RG = 1Ω, VGS = 10V
160
VDS = 37.5V
42 140
40 120
38
TJ = 25ºC
TJ = 125ºC 100
36 80
34 60
32 40
40 60 80 100 120 140 160 180 200
ID - Amperes
Fig. 14. Resistive Turn-on Rise Time vs.
Drain Current
180
160 RG = 1Ω , VGS = 10V
VDS = 37.5V
140
120 TJ = 125ºC
100
80
60
40
20 TJ = 25ºC
0
40 60 80 100 120 140 160 180
ID - Amperes
200
Fig. 16. Resistive Turn-off Switching Times vs.
Junction Temperature
44 140
42
t f td(off) - - - -
RG = 1Ω, VGS = 10V
130
40
VDS = 37.5V
120
38
I D = 100A
36
110
100
I D = 200A
34 90
32 80
30 70
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 18. Resistive Turn-off Switching Times vs.
Gate Resistance
600 600
t f td(off) - - - -
500 TJ = 125ºC, VGS = 10V
VDS = 37.5V
500
400 I D = 200A, 100A
400
300 300
200 200
100 100
00
1 2 3 4 5 6 7 8 9 10
RG - Ohms
© 2010 IXYS CORPORATION, All Rights Reserved
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet IXFZ520N075T2.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| IXFZ520N075T2 | TrenchT2 GigaMOS HiperFET Power MOSFET | IXYS Corporation |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |