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PDF IXFV110N25T Data sheet ( Hoja de datos )
| Número de pieza | IXFV110N25T | |
| Descripción | Trench Gate Power HiperFET | |
| Fabricantes | IXYS Corporation | |
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Preliminary Technical Information
Trench Gate
Power HiperFET
N-Channel Enhancement Mode
Avalanche Rated
IXFV110N25T
IXFV110N25TS
VDSS =
ID25 =
RDS(on) ≤
250V
110A
24mΩ
Symbol
V
DSS
VDGR
V
GSS
VGSM
ID25
I
LRMS
IDM
IA
E
AS
dV/dt
P
D
TJ
TJM
T
stg
TL
TSOLD
FC
Weight
Test Conditions
T = 25°C to 150°C
J
TJ = 25°C to 150°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C
Lead Current Limit, RMS
TC = 25°C, pulse width limited by TJM
TC = 25°C
T = 25°C
C
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
T = 25°C
C
1.6mm (0.062 in.) from case for 10s
Plastic body for 10 seconds
Mounting force
Maximum Ratings
250
250
± 20
± 30
110
75
300
25
1
V
V
V
V
A
A
A
A
J
10
694
-55 ... +150
150
-55 ... +150
300
260
11..65 / 2.5..14.6
4
V/ns
W
°C
°C
°C
°C
°C
N/lb.
g
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Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
BVDSS
VGS = 0V, ID = 250μA
V
GS(th)
V = V , I = 3mA
DS GS D
I V = ± 20V, V = 0V
GSS
GS DS
I
DSS
R
DS(on)
V =V
DS DSS
V = 0V
GS
T = 125°C
J
V = 10V, I = 0.5 • I , Notes 1, 2
GS D D25
Characteristic Values
Min. Typ. Max.
250 V
2.5 4.5 V
± 200 nA
10 μA
1 mA
24 mΩ
PLUS220 (IXFV)
G DS
(TAB)
PLUS220SMD (IXFV_S)
G
S
D (TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z International standard packages
z Avalanche rated
Advantages
z Easy to mount
z Space savings
z High power density
Applications
z DC-DC converters
z Battery chargers
z Switched-mode and resonant-mode
power supplies
z DC choppers
z AC motor drives
z Uninterruptible power supplies
© 2008 IXYS CORPORATION, All rights reserved
DS100031(08/08)
1 page  
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
29
28 RG = 2Ω
VGS = 15V
27 VDS = 125V
26
25
I D = 110A
24
I D = 55A
23
22
21
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
50 31
t r td(on) - - - -
45 TJ = 125ºC, VGS = 15V
VDS = 125V
40
I D = 110A, 55A
30
29
28
27
26
35 25
24
30 23
22
25 21
20
20 19
2 3 4 5 6 7 8 9 10
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RG - Ohms
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
30
29 t f td(off) - - - -
RG = 2Ω, VGS = 15V
28 VDS = 125V
TJ = 25ºC
27
90
85
80
75
26
25
24 TJ = 25ºC
TJ = 125ºC
70
65
60
23 55
22
TJ = 125ºC
21
20 30 40
50 60 70 80
ID - Amperes
50
45
90 100 110 120
© 2008 IXYS CORPORATION, All rights reserved
IXFV110N25T
IXFV110N25TS
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
29
28
TJ = 25ºC
27
26
RG = 2Ω
25 VGS = 15V
24 VDS = 125V
23
TJ = 125ºC
22
21
20
20 30 40 50 60 70 80 90 100 110 120
ID - Amperes
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
38
36 t f
td(off) - - - -
34 RG = 2Ω, VGS = 15V
32 VDS = 125V
30
28
I D = 55A
74
72
70
68
66
64
26 62
24
I D = 110A
60
22 58
20 56
18 54
16 52
14 50
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
100
90 t f
td(off) - - - -
TJ = 125ºC, VGS = 15V
80 VDS = 125V
I D = 55A, 110A
70
220
200
180
160
60 140
50 120
40 100
30 80
20 60
10 40
2 3 4 5 6 7 8 9 10
RG - Ohms
IXYS REF: T_110N25T(8W)08-11-08-A
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet IXFV110N25T.PDF ] | |
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