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IXFK88N30PのメーカーはIXYS Corporationです、この部品の機能は「Polar HiPerFET Power MOSFET」です。 |
部品番号 | IXFK88N30P |
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部品説明 | Polar HiPerFET Power MOSFET | ||
メーカ | IXYS Corporation | ||
ロゴ | |||
このページの下部にプレビューとIXFK88N30Pダウンロード(pdfファイル)リンクがあります。 Total 5 pages
PolarTM HiPerFETTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFT88N30P
IXFH88N30P
IXFK88N30P
Symbol
Test Conditions
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
VGSS
VGSM
ID25
IL(RMS)
IDM
Continuous
Transient
TC = 25°C
External Lead Current Limit
TC = 25°C, Pulse Width Limited by TJM
IA TC = 25°C
EAS TC = 25°C
dV/dt
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
PD TC = 25°C
TJ
TJM
Tstg
TL
TSOLD
1.6mm (0.063in) from Case for 10s
Plastic Body for 10s
Md Mounting Torque (TO-247&TO-264)
Weight TO-268www.DataSheet4U.net
TO-247
TO-264
Maximum Ratings
300
300
V
V
± 20 V
± 30 V
88 A
75 A
220 A
60 A
2J
10 V/ns
600 W
-55 to +150
+150
-55 to +150
°C
°C
°C
300 °C
260 °C
1.13/10
Nm/lb.in.
4g
6g
10 g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 4mA
IGSS VGS = ± 20V, VDS = 0V
IDSS VDS = VDSS, VGS = 0V
TJ = 125°C
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
Characteristic Values
Min. Typ. Max.
300 V
2.5 5.0 V
±100 nA
25 μA
250 μA
40 mΩ
© 2009 IXYS CORPORATION, All Rights Reserved
VDSS = 300V
ID25 = 88A
≤RDS(on) 40mΩ
trr ≤ 200ns
TO-268 (IXFT)
G
S
TO-247(IXFH)
Tab
G
DS
TO-264 (IXFK)
Tab
G
DS
Tab
G = Gate
S = Source
D = Drain
Tab = Drain
Features
z International Standard Packages
z Fast Intrinsic Diode
z Avalanche Rated
z Low RDS(ON) and QG
z Low Package Inductance
Advantages
z High Power Density
z Easy to Mount
z Space Savings
Applications
z DC-DC Coverters
z Battery Chargers
z Switch-Mode and Resonant-Mode
Power Supplies
z DC Choppers
z AC and DC Motor Drives
z Uninterrupted Power Supplies
z High Speed Power Switching
Applications
DS99216F(11/09)
1 Page IXFT88N30P IXFH88N30P
IXFK88N30P
90
80
70
60
50
40
30
20
10
0
0.0
Fig. 1. Output Characteristics @ TJ = 25ºC
VGS = 10V
9V
8V
7V
6V
5V
0.5 1.0 1.5 2.0 2.5 3.0 3.5
VDS - Volts
4.0
Fig. 3. Output Characteristics @ TJ = 125ºC
90
VGS = 10V
80 9V
8V
70
7V
60
50
40 6V
30
20
10 5V
0
0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0
VDS - Volts
www.DataSheet4U.net
Fig. 5. RDS(on) Normalized to ID = 44A Value
vs. Drain Current
3.6
VGS = 10V
3.2
TJ = 125ºC
2.8
8.0
2.4
2.0
1.6
1.2 TJ = 25ºC
0.8
0
20 40 60 80 100 120 140 160 180 200
ID - Amperes
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
200
VGS = 10V
180 9V
160
140
8V
120
100
80 7V
60
40 6V
20
5V
0
0 2 4 6 8 10 12 14 16 18 20
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 44A Value
vs. Junction Temperature
3.2
2.8 VGS = 10V
2.4 I D = 88A
2.0
1.6 I D = 44A
1.2
0.8
0.4
-50 -25 0 25 50 75 100 125 150
TJ - Degrees Centigrade
Fig. 6. Maximum Drain Current vs.
Case Temperature
80
70 External Lead Current Limit
60
50
40
30
20
10
0
-50
-25
0 25 50 75 100 125
TC - Degrees Centigrade
150
© 2009 IXYS CORPORATION, All Rights Reserved
3Pages | |||
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部品番号 | 部品説明 | メーカ |
IXFK88N30P | PolarHT HiPerFET Power MOSFET | IXYS |
IXFK88N30P | Polar HiPerFET Power MOSFET | IXYS Corporation |