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PDF IXFH86N30T Data sheet ( Hoja de datos )
| Número de pieza | IXFH86N30T | |
| Descripción | Trench HiperFET Power MOSFET | |
| Fabricantes | IXYS Corporation | |
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Advance Technical Information
TrenchTM HiperFETTM
Power MOSFET
IXFH86N30T
IXFT86N30T
VDSS = 300V
ID25 = 86A
≤RDS(on) 43mΩ
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
TO-247 (IXFH)
Symbol
Test Conditions
VDSS
VDGR
VGSS
VGSM
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Continuous
Transient
ID25 TC = 25°C
IDM TC = 25°C, Pulse Width Limited by TJM
EIAAS TC = 25°C
PD TC = 25°C
dV/dt
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
1.6mm (0.063in) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO-247)
TO-247
TO-268
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Maximum Ratings
300
300
V
V
±20 V
±30 V
86 A
190 A
15 A
2J
830 W
20 V/ns
-55 to +150
+150
-55 to +150
300
260
1.13/10
°C
°C
°C
°C
°C
Nm/lb.in.
6.0 g
4.0 g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 1mA
VGS(th)
VDS = VGS, ID = 4mA
IGSS VGS = ±20V, VDS = 0V
IDSS VDS = VDSS, VGS = 0V
TJ = 125°C
RDS(on)
VGS = 10V, ID = 0.5 • ID25 , Note 1
Characteristic Values
Min. Typ. Max.
300 V
3.0 5.0 V
±200 nA
50 μA
1.75 mA
43 mΩ
G DS
D (Tab)
TO-268 (IXFT)
G
S
D (Tab)
G = Gate
S = Source
D = Drain
Tab = Drain
Features
z International Standard Packages
z Avalanche Rated
z High Current Handling Capability
z Fast Intrinsic Rectifier
z Low RDS(on)
Advantages
z Easy to Mount
z Space Savings
z High Power Density
Applications
z DC-DC Converters
z Battery Chargers
z Switch-Mode and Resonant-Mode
Power Supplies
z DC Choppers
z AC Motor Drives
z Uninterruptible Power Supplies
z High Speed Power Switching
© 2009 IXYS CORPORATION, All Rights Reserved
DS100208(11/09)
1 page  
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
26
RG = 3.3Ω , VGS = 15V
24 VDS = 150V
22 I D = 86A
20
18 I D = 43A
16
14
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
26 17
25 t r td(on) - - - - 17
TJ = 125ºC, VGS = 15V
24
I D = 86A
VDS = 150V
16
23 16
22 15
21 I D = 43A
20
15
14
19 14
18
2
4
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20
19
18
6 8 10 12 14 16
RG - Ohms
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
t f td(off) - - - -
RG = 3.3Ω, VGS = 15V
VDS = 150V
13
18
80
75
70
17
TJ = 125ºC
16
TJ = 25ºC
15
65
60
55
14 50
13 45
40 45 50 55 60 65 70 75 80 85 90
ID - Amperes
IXFH86N30T
IXFT86N30T
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
26
RG = 3.3Ω , VGS = 15V
24 VDS = 150V
TJ = 125ºC
22
20
18
TJ = 25ºC
16
14
40 45 50 55 60 65 70 75 80 85 90
ID - Amperes
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
24
t f td(off) - - - -
22 RG = 3.3Ω, VGS = 15V
VDS = 150V
20
I D = 86A
18
75
70
65
60
16
I D = 43A
55
14 50
12 45
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
22
t f td(off) - - - -
20 TJ = 125ºC, VGS = 15V
VDS = 150V
18
80
75
70
16
I D = 86A
65
14 60
12
I D = 43A
55
10 50
2 4 6 8 10 12 14 16 18
RG - Ohms
© 2009 IXYS CORPORATION, All Rights Reserved
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet IXFH86N30T.PDF ] | |
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