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PDF IXFT80N10Q Data sheet ( Hoja de datos )
| Número de pieza | IXFT80N10Q | |
| Descripción | HiPerFET Power MOSFETs | |
| Fabricantes | IXYS Corporation | |
| Logotipo |  |
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HiPerFETTM
Power MOSFETs
Q-Class
N-Channel Enhancement Mode
Avalanche Rated, High dV/dt
Low Gate Charge and Capacitances
Preliminary data
IXFH 80N10Q
IXFT 80N10Q
VDSS
ID25
RDS(on)
= 100 V
= 80 A
= 15 mW
trr £ 200ns
Symbol
VDSS
VDGR
VGS
VGSM
I
D25
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
Md
Weight
www.DataSheet4U.net
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MW
Continuous
Transient
T
C
= 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
I
S
£
I,
DM
di/dt
£
100
A/ms,
V
DD
£
V,
DSS
TJ £ 150°C, RG = 2 W
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Mounting torque (TO-247)
TO-247 AD
TO-268
Maximum Ratings
100 V
100 V
±20 V
±30 V
80 A
320 A
80 A
30 mJ
1.5 J
5 V/ns
360
-55 ... +150
150
-55 ... +150
W
°C
°C
°C
300 °C
1.13/10 Nm/lb.in.
6g
4g
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
VDSS
VGS = 0 V, ID = 250 mA
VGS(th)
VDS = VGS, ID = 4 mA
I
GSS
V
GS
=
±20
V,
DC
V
DS
=
0
IDSS
VDS = VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t £ 300 ms, duty cycle d £ 2 %
Characteristic Values
Min. Typ. Max.
100 V
2.0 4 V
±100 nA
25 mA
1 mA
15 mW
TO-247 AD (IXFH)
(TAB)
TO-268 (IXFT) Case Style
G
S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
• IXYS advanced low gate charge
process
• International standard packages
• Low gate charge and capacitance
- easier to drive
- faster switching
• Low R
DS (on)
• Unclamped Inductive Switching (UIS)
rated
• Molding epoxies meet UL 94V-0
flammability classification
Advantages
• Easy to mount
• Space savings
• High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
98592B (7/00)
1-2
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet IXFT80N10Q.PDF ] | |
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