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IXFQ50N60P3 の電気的特性と機能

IXFQ50N60P3のメーカーはIXYS Corporationです、この部品の機能は「Polar3 HiperFET Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IXFQ50N60P3
部品説明 Polar3 HiperFET Power MOSFET
メーカ IXYS Corporation
ロゴ IXYS Corporation ロゴ 




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IXFQ50N60P3 Datasheet, IXFQ50N60P3 PDF,ピン配置, 機能
Advance Technical Information
Polar3TM HiperFETTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
IXFT50N60P3
IXFQ50N60P3
IXFH50N60P3
Symbol
Test Conditions
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, Pulse Width Limited by TJM
TC = 25°C
TC = 25°C
dv/dt
PD
IS IDM, VDD VDSS, TJ 150°C
TC = 25°C
TJ
TJM
Tstg
TL 1.6mm (0.062in.) from Case for 10s
Tsold Plastic Body for 10 seconds
Md Mounting Torque (TO-247 & TO-3P)
Weight TO-268www.DataSheet4U.net
TO-3P
TO-247
Maximum Ratings
600
600
± 30
± 40
50
125
25
1
V
V
V
V
A
A
A
J
35
1040
-55 ... +150
150
-55 ... +150
300
260
1.13 / 10
4.0
5.5
6.0
V/ns
W
°C
°C
°C
°C
°C
Nm/lb.in.
g
g
g
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 1mA
VGS(th)
VDS = VGS, ID = 4mA
IGSS VGS = ±30V, VDS = 0V
IDSS VDS = VDSS, VGS= 0V
TJ = 125°C
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
Characteristic Values
Min. Typ. Max.
600 V
3.0 5.0 V
±100 nA
25 μA
2 mA
145 mΩ
VDSS =
ID25 =
RDS(on)
600V
50A
145mΩ
TO-268 (IXFT)
G
S
D (Tab)
TO-3P (IXFQ)
G
D
S
TO-247 (IXFH)
D (Tab)
G
DS
D (Tab)
G = Gate
S = Source
D = Drain
Tab = Drain
Features
z Fast Intrinsic Rectifier
z Avalanche Rated
z Low RDS(ON) and QG
z Low Package Inductance
Advantages
z High Power Density
z Easy to Mount
z Space Savings
Applications
z Switch-Mode and Resonant-Mode
Power Supplies
z DC-DC Converters
z Laser Drivers
z AC and DC Motor Drives
z Robotics and Servo Controls
© 2011 IXYS CORPORATION, All Rights Reserved
DS100310(03/11)

1 Page





IXFQ50N60P3 pdf, ピン配列
IXFT50N60P3 IXFQ50N60P3
IXFH50N60P3
Fig. 1. Output Characteristics @ TJ = 25ºC
50
VGS = 10V
45 7V
40
35
30
6V
25
20
15
10
5 5V
0
01234567
VDS - Volts
Fig. 3. Output Characteristics @ TJ = 125ºC
50
VGS = 10V
45 7V
40
35 6V
30
25
20
15
5V
10
5
4V
0
0 2 4 6 8 10 12 14 16
www.DataSheet4U.net
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 25A Value vs.
Drain Current
3.0
VGS = 10V
2.6 TJ = 125ºC
2.2
18
1.8
1.4
TJ = 25ºC
1.0
0.6
0
10 20 30 40 50 60 70 80 90 100
ID - Amperes
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
100
VGS = 10V
90 8V
80
7V
70
60
50
40
6V
30
20
10
0
0
5V
5 10 15 20 25 30
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 25A Value vs.
Junction Temperature
3.4
VGS = 10V
3.0
2.6 I D = 50A
2.2
I D = 25A
1.8
1.4
1.0
0.6
0.2
-50
-25
0 25 50 75 100 125 150
TJ - Degrees Centigrade
Fig. 6. Maximum Drain Current vs.
Case Temperature
60
50
40
30
20
10
0
-50
-25
0 25 50 75 100 125 150
TC - Degrees Centigrade
© 2011 IXYS CORPORATION, All Rights Reserved


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部品番号部品説明メーカ
IXFQ50N60P3

Polar3 HiperFET Power MOSFET

IXYS Corporation
IXYS Corporation


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