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PDF IXFR80N20Q Data sheet ( Hoja de datos )
| Número de pieza | IXFR80N20Q | |
| Descripción | HiPerFET Power MOSFETs | |
| Fabricantes | IXYS Corporation | |
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HiPerFETTM Power MOSFETs
ISOPLUS247TM, Q-Class
IXFR 80N20Q
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode
Avalanche Rated
Low Qg, High dv/dt
Preliminary data
VDSS = 200 V
ID25 = 71 A
=RDS(on) 28mW
trr £ 200 ns
Symbol
VDSS
VDGR
V
GS
VGSM
ID25
IDM
I
AR
EAR
EAS
dv/dt
P
D
TJ
TJM
Tstg
TL
Md
Weight
www.DataSheet4U.net
Symbol
VDSS
VGS(th)
IGSS
IDSS
RDS(on)
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MW
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
T
C
= 25°C
TC = 25°C
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS,
TJ £ 150°C, RG = 2 W
T
C
= 25°C
1.6 mm (0.063 in) from case for 10 s
Mounting torque
Maximum Ratings
200 V
200 V
±20 V
±30 V
71 A
320 A
80 A
45 mJ
1.5 J
5 V/ns
310
-55 ... +150
150
-55 ... +150
300
W
°C
°C
°C
°C
1.13/10 Nm/lb.in.
5g
Test Conditions
VGS = 0 V, ID = 250 uA
VDS = VGS, ID = 4 mA
VGS = ±20 VDC, VDS = 0
VDS = VDSS
V =0V
GS
VGS = 10 V, ID = IT
Note 1
Characteristic Values
(T
J
=
25°C,
unless
otherwise
specified)
min. typ. max.
200 V
2.0 4.0 V
±100 nA
TJ = 25°C
T
J
=
125°C
25 mA
1 mA
28 mW
ISOPLUS 247TM
E153432
G
D
G = Gate
S = Source
D = Drain
TAB = Drain
Features
• Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
• Low drain to tab capacitance(<30pF)
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Fast intrinsic Rectifier
Applications
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• AC motor control
Advantages
• Easy assembly
• Space savings
• High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
98617A (7/00)
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| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet IXFR80N20Q.PDF ] | |
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