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IXFC20N80P の電気的特性と機能

IXFC20N80PのメーカーはIXYS Corporationです、この部品の機能は「PolarHV HiPerFET Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IXFC20N80P
部品説明 PolarHV HiPerFET Power MOSFET
メーカ IXYS Corporation
ロゴ IXYS Corporation ロゴ 




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IXFC20N80P Datasheet, IXFC20N80P PDF,ピン配置, 機能
PolarHVTM HiPerFET IXFC 20N80P
Power MOSFET
IXFR 20N80P
Electrically Isolated Back Surface
N-Channel Enhancement Mode
Fast Recovery Diode
Avalanche Rated
VDSS = 800 V
ID25 = 10 A
RDS(on) 500 mΩ
trr 250 ns
Symbol
V
DSS
VDGR
V
GSS
VGSM
ID25
IDM
IAR
EAR
EAS
Test Conditions
T
J
= 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
Maximum Ratings
800 V
800 V
ISOPLUS220TM (IXFC)
E153432
±30 V
±40 V
G
11
A
D
S
Isolated back surface
60 A
10 A ISOPLUS247TM (IXFR)
30 mJ
E153432
1.0 J
dv/dt
PD
TJ
TJM
Tstg
T
L
www.DataSheet4U.net
VISOL
FC
Weight
IS IDM, di/dt 100 A/μs, VDD VDSS,
TJ 150°C, RG = 3 Ω
TC = 25°C
10
166
-55 ... +150
150
-55 ... +150
1.6 mm (0.062 in.) from case for 10 s
300
50/60 Hz, RMS, t = 1minute, leads-to-tab
2500
Mounting Force
ISOPLUS220
ISOPLUS247
(IXFC)
(IXFR)
11..65 / 2.5..15
20..120 / 4.5..25
2
5
V/ns
W
°C
°C
°C
°C
V~
N/lb
N/lb
g
g
Isolated back surface
G = Gate
S = Source
D = Drain
Features
z Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
z Low drain to tab capacitance(<30pF)
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
BVDSS
VGS = 0 V, ID = 250 μA
VGS(th)
VDS = VGS, ID = 4 mA
IGSS VGS = ±30 V, VDS = 0 V
Characteristic Values
Min. Typ. Max.
800 V
3.0 5.0 V
±100 nA
Applications
z DC-DC converters
z Battery chargers
z Switched-mode and resonant-mode
power supplies
z DC choppers
z AC motor control
IDSS
RDS(on)
VDS = VDSS
V =0V
GS
T
J
=
125°C
VGS = 10 V, ID = 10 A
Pulse test, t 300 μs, duty cycle d 2 %
25 μA
1 mA
500 mΩ
Advantages
z Easy assembly
z Space savings
z High power density
© 2006 IXYS All rights reserved
DS99602E(08/06)

1 Page





IXFC20N80P pdf, ピン配列
20
18
16
14
12
10
8
6
4
2
0
0
Fig. 1. Output Characte r is tics
@ 25ºC
VGS = 10V
7V
6V
5V
2 4 6 8 10 12
V D S - V olts
20
18
16
14
12
10
8
6
4
2
0
0
www.DataSheet4U.net
2.6
Fig. 3. Output Characte r is tics
@ 125ºC
VGS = 10V
7V
6V
5V
2 4 6 8 10 12 14 16 18 20 22
V D S - V olts
Fig. 5. RDS(on) Nor m alize d to
ID = 10A V alue vs . Dr ain Cur re nt
2.4 VGS = 10V
2.2
2
TJ = 125º C
1.8
1.6
1.4
1.2
1 TJ = 25º C
0.8
0
5 10 15 20 25 30 35 40
I D - A mperes
© 2006 IXYS All rights reserved
IXFC 20N80P
IXFR 20N80P
Fig. 2. Exte nde d Output Char acte ris tics
@ 25ºC
36
32
VGS = 10V
7V
28
6V
24
20
16
12
8
5V
4
0
0 3 6 9 12 15 18 21 24 27 30
V D S - V olts
Fig. 4. RDS(on) Nor m alize d to ID = 10A
V alue vs . Junction Te m pe rature
2.6
2.4
VGS = 10V
2.2
2
1.8
1.6
ID = 20A
1.4
1.2 ID = 10A
1
0.8
0.6
0.4
-50
-25
0 25 50 75 100 125
TJ - Degrees Centigrade
150
12
11
10
9
8
7
6
5
4
3
2
1
0
-50
Fig. 6. Dr ain Cur r e nt vs . Cas e
Tem perature
-25 0 25 50 75 100 125 150
TC - Degrees Centigrade


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部品番号部品説明メーカ
IXFC20N80P

PolarHV HiPerFET Power MOSFET

IXYS Corporation
IXYS Corporation


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