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3VD186700YL PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 3VD186700YL
部品説明 HIGH VOLTAGE MOSFET CHIPS
メーカ Silan Microelectronics
ロゴ Silan Microelectronics ロゴ 

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3VD186700YL Datasheet, 3VD186700YL PDF,ピン配置, 機能
3VD186700YL
3VD186700YL HIGH VOLTAGE MOSFET CHIPS
DESCRIPTION
¾ 3VD186700YL is a High voltage N-Channel
enhancement mode power MOS-FET chip fabricated in
advanced silicon epitaxial planar technology.
¾ Advanced termination scheme to provide enhanced
voltage-blocking capability.
¾ Avalanche Energy Specified
¾ Source-to-Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
¾ The chips may packaged in TO-251-3L type and the
typical equivalent product is 1N70.
¾ The packaged product is widely used in AC-DC power
suppliers, DC-DC converters and H-bridge PWM motor
drivers.
¾ Die size: 1.96mm*1.78mm.
¾ Chip Thickness: 300±20μm.
¾ Top metal: Al, Backside Metal: Ag.
CHIP TOPOGRAPHY
ABSOLUTE MAXIMUM RATINGS (Tamb=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Operation Junction Temperature
Storage Temperature
Symbol
VDS
VGS
ID
TJ
Tstg
Ratings
700
±30
1.0
150
-55-150
Unit
V
V
A
°C
°C
ELECTRICAL CHARACTERISTICS (Tamb=25°C)
www.DataSheet4U.net
Parameter
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-Resistance
Source-Drain Diode Forward On
Voltage
Symbol
V(BR)DSS
Vth(GS)
lGSS
IDSS
RDS(on)
Test conditions
VGS = 0V, ID=250μA
ID=250μA ,VDS=VGS
VGS=±30V, VDS=0V
VDS=700V, VGS=0V
ID=0.4A, VGS=10V
VFSD
ID=1.0A,VGS=0V
Min.
700
2.0
---
---
---
Typ.
---
---
---
---
---
Max.
----
4.0
±100
1.0
14.5
Unit
V
V
nA
µA
Ω
--- --- 1.4 V
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http: www.silan.com.cn
REV:1.0 2008.10.15
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部品番号部品説明メーカ
3VD186700YL

HIGH VOLTAGE MOSFET CHIPS

Silan Microelectronics
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