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IXFP7N100P の電気的特性と機能

IXFP7N100PのメーカーはIXYS Corporationです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IXFP7N100P
部品説明 Power MOSFET ( Transistor )
メーカ IXYS Corporation
ロゴ IXYS Corporation ロゴ 




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IXFP7N100P Datasheet, IXFP7N100P PDF,ピン配置, 機能
Polar TM HiPerFETTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
IXFA7N100P
IXFP7N100P
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
dV/dt
PD
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, Pulse Width Limited by TJM
TC = 25°C
TC = 25°C
IS IDM, VDD VDSS, TJ 150°C
TC = 25°C
1.6mm (0.062) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO-220)
TO-263
TO-220
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Maximum Ratings
1000
1000
±30
±40
7
18
7
300
V
V
V
V
A
A
A
mJ
10
300
-55 ... +150
150
-55 ... +150
300
260
1.13 / 10
2.5
3.0
V/ns
W
°C
°C
°C
°C
°C
Nm/lb.in.
g
g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 1mA
IGSS VGS = ±30V, VDS = 0V
IDSS VDS = VDSS, VGS= 0V
TJ = 125°C
RDS(on)
VGS = 10V, ID = 0.5 ID25, Note 1
Characteristic Values
Min. Typ.
Max.
1000
V
3.0 6.0 V
±100 nA
15 μA
1.0 mA
1.9 Ω
VDSS =
ID25 =
RDS(on)
1000V
7A
1.9Ω
TO-263 AA (IXFA)
G
S
D (Tab)
TO-220AB (IXFP)
GD S
D (Tab)
G = Gate
S = Source
D = Drain
Tab = Drain
Features
z International Standard Packages
z Fast Intrinsic Rectifier
z Avalanche Rated
z Low RDS(ON) and QG
z Low Package Inductance
Advantages
z High Power Density
z Easy to Mount
z Space Savings
Applications
z Switch-Mode and Resonant-Mode
Power Supplies
z DC-DC Converters
z Laser Drivers
z AC and DC Motor Drives
z Robotics and Servo Controls
© 2009 IXYS CORPORATION, All Rights Reserved
DS99924A(10/09)

1 Page





IXFP7N100P pdf, ピン配列
IXFA7N100P
IXFP7N100P
Fig. 1. Output Characteristics @ TJ = 25ºC
7
VGS = 10V
8V
6
5
7V
4
3
2 6V
1
5V
0
0 2 4 6 8 10 12 14
VDS - Volts
Fig. 3. Output Characteristics @ TJ = 125ºC
7
VGS = 10V
6 8V
5 7V
4
3 6V
2
1
5V
0
0 3 6 9 12 15 18 21 24
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VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 3.5A Value
vs. Drain Current
2.6
2.4 VGS = 10V
2.2
TJ = 125ºC
2.0
1.8
1.6
1.4
1.2
TJ = 25ºC
1.0
0.8
0 2 4 6 8 10 12
ID - Amperes
27
14
© 2009 IXYS CORPORATION, All Rights Reserved
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
14
VGS = 10V
12 8V
10
8
7V
6
4
2 6V
5V
0
0 5 10 15 20 25 30 35
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 3.5A Value vs.
Junction Temperature
3.0
2.6 VGS = 10V
2.2 I D = 7A
1.8
1.4 I D = 3.5A
1.0
0.6
0.2
-50
-25
0
25 50 75 100 125 150
TJ - Degrees Centigrade
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
-50
Fig. 6. Maximum Drain Current vs.
Case Temperature
-25 0
25 50 75 100 125
TC - Degrees Centigrade
150


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部品番号部品説明メーカ
IXFP7N100P

Power MOSFET ( Transistor )

IXYS Corporation
IXYS Corporation


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