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PDF IXFA76N15T2 Data sheet ( Hoja de datos )
| Número de pieza | IXFA76N15T2 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | IXYS Corporation | |
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Advance Technical Information
TrenchT2TM HiperFETTM
Power MOSFET
IXFA76N15T2
IXFP76N15T2
VDSS =
ID25 =
RDS(on) ≤
150V
76A
20mΩ
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrnsic Rectifier
TO-263 AA (IXFA)
Symbol
Test Conditions
VDSS
VDGR
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGS = 1MΩ
VGSS
VGSM
ID25
IDM
IA
EAS
Continuous
Transient
TC = 25°C
TC = 25°C, Pulse Width Limited by TJM
TC = 25°C
TC = 25°C
dV/dt
PD
TJ
TJM
Tstg
IS ≤ IDM,, VDD ≤ VDSS,TJ ≤ 175°C
TC = 25°C
TL 1.6mm (0.062in.) from Case for 10s
Tsold Plastic Body for 10 seconds
Md Mounting Torque (TO-220)
Weight
TO-263
TO-220www.DataSheet4U.net
Maximum Ratings
150
150
V
V
± 20 V
± 30 V
76 A
200 A
38 A
500 mJ
15
350
-55 ... +175
175
-55 ... +175
V/ns
W
°C
°C
°C
300
260
1.13 / 10
2.5
3.0
°C
°C
Nm/lb.in.
g
g
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 250μA
IGSS VGS = ± 20V, VDS = 0V
IDSS VDS = VDSS, VGS = 0V
TJ = 150°C
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Notes 1, 2
Characteristic Values
Min. Typ. Max.
150 V
2.5 4.5 V
±200 nA
5 μA
750 μA
20 mΩ
G
S
D (TAB)
TO-220AB (IXFP)
GD S
D (TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z International Standard Packages
z 175°C Operating Temperature
z High Current Handling Capability
z Fast Intrinsic Rectifier
z Dynamic dV/dt Rated
z Low RDS(on)
Advantages
z Easy to Mount
z Space Savings
z High Power Density
Applications
z DC-DC Converters
z Battery Chargers
z Switched-Mode and Resonant-Mode
Power Supplies
z DC Choppers
z AC Motor Drives
z Uninterruptible Power Supplies
z High Speed Power Switching
Applications
© 2009 IXYS CORPORATION, All Rights Reserved
DS100176(08/09)
1 page  
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
22
RG = 5Ω
21 VGS = 10V
VDS = 75V
20
19 I D = 152A
18 I D = 76A
17
16
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
22
t r td(on) - - - -
21 TJ = 125ºC, VGS = 10V
VDS = 75V
20
20
19
18
19 17
18
I D = 76A, 152A
16
17 15
16 14
4 6 8 10 12 14 16 18 20
RG - Ohms
www.DataSheet4U.net
18
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
34
17
t f td(off) - - - -
RG = 5Ω, VGS = 10V
32
16
VDS = 75V
30
15
TJ = 125ºC
14
TJ = 25ºC
13
28
26
24
12 22
11 20
30 40 50 60 70 80 90 100 110 120 130 140 150 160
ID - Amperes
IXFA76N15T2
IXFP76N15T2
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
22
RG = 5Ω
21 VGS = 10V
VDS = 75V
20 TJ = 125ºC
19 TJ = 25ºC
18
17
30 40 50 60 70 80 90 100 110 120 130 140 150 160
ID - Amperes
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
16.0
t f td(off) - - - -
15.5 RG = 5Ω, VGS = 10V
VDS = 75V
15.0
30
28
26
14.5 24
14.0
I D = 76A, 152A
13.5
22
20
13.0 18
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
17 30
16
t f td(off) - - - -
TJ = 125ºC, VGS = 10V
29
15
VDS = 75V
28
14
I D = 152A
13 I D = 76A
12
27
26
25
11 24
10 23
4 6 8 10 12 14 16 18 20
RG - Ohms
© 2009 IXYS CORPORATION, All Rights Reserved
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet IXFA76N15T2.PDF ] | |
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