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PDF IXFP6N120P Data sheet ( Hoja de datos )
| Número de pieza | IXFP6N120P | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | IXYS Corporation | |
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Advance Technical Information
PolarTM HiPerFETTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFA6N120P
IXFP6N120P
IXFH6N120P
Symbol
Test Conditions
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, Pulse Width Limited by TJM
TC = 25°C
TC = 25°C
dv/dt
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
PD TC = 25°C
TJ
TJM
Tstg
TL
TSOLD
1.6mm (0.062) from Case for 10s
Plastic Body for 10s
Md Mounting Torque (TO-220 &TO-247)
Weight
TO-263
TO-220www.DataSheet4U.net
TO-247
Maximum Ratings
1200
1200
V
V
±30 V
±40 V
6A
18 A
3A
300 mJ
10
250
-55 ... +150
150
-55 ... +150
300
260
1.13 / 10
2.5
3.0
6.0
V/ns
W
°C
°C
°C
°C
°C
Nm/lb.in.
g
g
g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 250µA
VGS(th)
VDS = VGS, ID = 1mA
IGSS VGS = ±30V, VDS = 0V
IDSS VDS = VDSS, VGS = 0V
TJ = 125°C
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
Characteristic Values
Min. Typ. Max.
1200
V
2.5 5.0 V
±100 nA
10 µA
1 mA
2.4 Ω
VDSS =
ID25 =
≤RDS(on)
1200V
6A
2.4Ω
TO-263 AA (IXFA)
G
S
D (Tab)
TO-220AB (IXFP)
GD S
TO-247 (IXFH)
D (Tab)
G
DS
D (Tab)
G = Gate
S = Source
D = Drain
Tab = Drain
Features
z International Standard Packages
z Dynamic dv/dt Rating
z Avalanche Rated
z Fast Intrinsic Diode
z Low QG
z Low RDS(on)
z Low Drain-to-Tab Capacitance
z Low Package Inductance
Advantages
z Easy to Mount
z Space Savings
Applications
z DC-DC Converters
z Battery Chargers
z Switch-Mode and Resonant-Mode
Power Supplies
z Uninterrupted Power Supplies
z AC Motor Drives
z High Speed Power Switching
Applications
© 2009 IXYS CORPORATION, All Rights Reserved
DS100202A(11/09)
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet IXFP6N120P.PDF ] | |
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