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IXFA5N100PのメーカーはIXYS Corporationです、この部品の機能は「Power MOSFET ( Transistor )」です。 |
部品番号 | IXFA5N100P |
| |
部品説明 | Power MOSFET ( Transistor ) | ||
メーカ | IXYS Corporation | ||
ロゴ | |||
このページの下部にプレビューとIXFA5N100Pダウンロード(pdfファイル)リンクがあります。 Total 4 pages
Preliminary Technical Information
PolarTM Power MOSFET
HiPerFETTM
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFA5N100P
IXFH5N100P
IXFP5N100P
VDSS =
ID25 =
≤RDS(on)
1000V
5A
2.8Ω
TO-263 (IXFA)
Symbol
Test Conditions
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
dV/dt
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
PD TC = 25°C
TJ
TJM
Tstg
TL
TSOLD
1.6mm (0.062) from case for 10s
Plastic body for 10s
Md Mounting torque (TO-220,TO-247)
Weight
TO-263
TO-220
TO-247
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Maximum Ratings
1000
1000
±30
±40
5
10
5
300
V
V
V
V
A
A
A
mJ
10
250
-55 ... +150
150
-55 ... +150
300
260
1.13 / 10
2.5
3.0
6.0
V/ns
W
°C
°C
°C
°C
°C
Nm/lb.in.
g
g
g
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 250μA
IGSS VGS = ±30V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
TJ = 125°C
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
Characteristic Values
Min. Typ. Max.
1000
V
3.0 6.0 V
±100 nA
10 μA
750 μA
2.8 Ω
© 2008 IXYS CORPORATION, All rights reserved
G
S
TO-247 (IXFH)
(TAB)
G
DS
TO-220 (IXFP)
(TAB)
GDS
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z International standard packages
z Dynamic dv/dt Rating
z Avalanche Rated
z Low RDS(ON), rugged PolarTM process
z Low QG
z Low Drain-to-Tab capacitance
z Low package inductance
Advantages
z Easy to mount
z Space savings
Applications:
z DC-DC converters
z Battery chargers
z Switched-mode and resonant-mode
power supplies
z Uninterrupted power supplies
z AC motor control
z High speed power switching
applications
DS99923(07/08)
1 Page 5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
Fig. 1. Output Characteristics
@ 25ºC
VGS = 10V
8V
7V
6V
5V
2 4 6 8 10 12 14
VDS - Volts
Fig. 3. Output Characteristics
@ 125ºC
5.0
VGS = 10V
4.5 8V
4.0
3.5 7V
3.0
2.5
2.0 6V
1.5
1.0
0.5 5V
0.0
0 3 6 9 12 15 18 21 24 27 30
VDS - Volts
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Fig. 5. RDS(on) Normalized to ID = 2.5A Value
vs. Drain Current
2.6
2.4 VGS = 10V
2.2
TJ = 125ºC
2.0
1.8
1.6
1.4
1.2
TJ = 25ºC
1.0
0.8
012345678
ID - Amperes
IXFA5N100P IXFH5N100P
IXFP5N100P
Fig. 2. Extended Output Characteristics
@ 25ºC
8
VGS = 10V
7 9V
8V
6
5
7V
4
3
2
6V
1
0
0 5 10 15 20 25 30
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 2.5A Value
vs. Junction Temperature
2.8
VGS = 10V
2.4
2.0 I D = 5A
I D = 2.5A
1.6
1.2
0.8
0.4
-50
-25
0 25 50 75 100 125 150
TJ - Degrees Centigrade
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-50
Fig. 6. Maximum Drain Current vs.
Case Temperature
-25 0 25 50 75 100 125
TC - Degrees Centigrade
150
© 2008 IXYS CORPORATION, All rights reserved
3Pages | |||
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部品番号 | 部品説明 | メーカ |
IXFA5N100P | Power MOSFET ( Transistor ) | IXYS Corporation |