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PDF IXFP5N100P Data sheet ( Hoja de datos )
| Número de pieza | IXFP5N100P | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | IXYS Corporation | |
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Preliminary Technical Information
PolarTM Power MOSFET
HiPerFETTM
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFA5N100P
IXFH5N100P
IXFP5N100P
VDSS =
ID25 =
≤RDS(on)
1000V
5A
2.8Ω
TO-263 (IXFA)
Symbol
Test Conditions
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
dV/dt
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
PD TC = 25°C
TJ
TJM
Tstg
TL
TSOLD
1.6mm (0.062) from case for 10s
Plastic body for 10s
Md Mounting torque (TO-220,TO-247)
Weight
TO-263
TO-220
TO-247
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Maximum Ratings
1000
1000
±30
±40
5
10
5
300
V
V
V
V
A
A
A
mJ
10
250
-55 ... +150
150
-55 ... +150
300
260
1.13 / 10
2.5
3.0
6.0
V/ns
W
°C
°C
°C
°C
°C
Nm/lb.in.
g
g
g
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 250μA
IGSS VGS = ±30V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
TJ = 125°C
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
Characteristic Values
Min. Typ. Max.
1000
V
3.0 6.0 V
±100 nA
10 μA
750 μA
2.8 Ω
© 2008 IXYS CORPORATION, All rights reserved
G
S
TO-247 (IXFH)
(TAB)
G
DS
TO-220 (IXFP)
(TAB)
GDS
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z International standard packages
z Dynamic dv/dt Rating
z Avalanche Rated
z Low RDS(ON), rugged PolarTM process
z Low QG
z Low Drain-to-Tab capacitance
z Low package inductance
Advantages
z Easy to mount
z Space savings
Applications:
z DC-DC converters
z Battery chargers
z Switched-mode and resonant-mode
power supplies
z Uninterrupted power supplies
z AC motor control
z High speed power switching
applications
DS99923(07/08)
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet IXFP5N100P.PDF ] | |
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