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IXFP4N100PMのメーカーはIXYS Corporationです、この部品の機能は「Power MOSFET ( Transistor )」です。 |
部品番号 | IXFP4N100PM |
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部品説明 | Power MOSFET ( Transistor ) | ||
メーカ | IXYS Corporation | ||
ロゴ | |||
このページの下部にプレビューとIXFP4N100PMダウンロード(pdfファイル)リンクがあります。 Total 4 pages
Advance Technical Information
PolarTM HiperFETTM
Power MOSFET
IXFP4N100PM
VDSS =
ID25 =
RDS(on) ≤
1000V
2.5A
3.3Ω
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1 MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, Pulse Width Limited by TJM
TC = 25°C
TC = 25°C
IS ≤ IDM, VDD ≤ VDSS, TJ =150°C
TC = 25°C
1.6 mm (0.062 in.) from Case for 10 s
Plastic Body for 10 s
Mounting Torque
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Maximum Ratings
1000
1000
V
V
± 20 V
± 30 V
2.5 A
8.0 A
4.0 A
200 mJ
10
57
- 55 ... +150
150
- 55 ... +150
300
260
1.13/10
2.5
V/ns
W
°C
°C
°C
°C
°C
Nm/lb.in.
g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 250μA
IGSS VGS = ±20V, VDS = 0V
IDSS VDS = VDSS, VGS = 0V
RDS(on)
VGS = 10V, ID = 2A, Note 1
TJ = 125°C
Characteristic Values
Min. Typ. Max.
1000
V
3.0 6.0 V
±100 nA
10 μA
750 μA
3.3 Ω
OVERMOLDED
GDS
G = Gate
S = Source
D = Drain
Features
z Plastic Overmolded Tab for Electrical
Isolation
z Avalanche Rated
z Fast Intrinsic Diode
z Low Package Inductance
Advantages
z High Power Density
z Easy to Mount
z Space Savings
Applications
z Switch-Mode and Resonant-Mode
Power Supplies
z DC-DC Converters
z Laser Drivers
z AC and DC Motor Drives
z Robotics and Servo Controls
© 2010 IXYS CORPORATION, All Rights Reserved
DS100295(11/10)
1 Page IXFP4N100PM
4
3.5
3
2.5
2
1.5
1
0.5
0
0
Fig. 1. Output Characteristics @ TJ = 25ºC
VGS = 10V
8V
7V
6V
5V
1 2 3 4 5 6 7 8 9 10 11 12
VDS - Volts
Fig. 3. Output Characteristics @ TJ = 125ºC
4
3.6 VGS = 10V
7V
3.2
2.8
6V
2.4
2
1.6
1.2
0.8 5V
0.4
0
0 2 4 6 8 10 12 14 16 18 20 22 24 26
VDS - Volts
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Fig. 5. RDS(on) Normalized to ID = 2A Value vs.
Drain Current
2.6
28
2.4 VGS = 10V
2.2
TJ = 125ºC
2.0
1.8
1.6
1.4
1.2 TJ = 25ºC
1.0
0.8
012345678
ID - Amperes
© 2010 IXYS CORPORATION, All Rights Reserved
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
8
VGS = 10V
7 8V
6
7V
5
4
3 6V
2
1 5V
0
0 5 10 15 20 25 30 35
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 2A Value vs.
Junction Temperature
3.0
VGS = 10V
2.6
2.2 I D = 4A
1.8 I D = 2A
1.4
1.0
0.6
0.2
-50 -25 0 25 50 75 100 125 150
TJ - Degrees Centigrade
Fig. 6. Maximum Drain Current vs.
Case Temperature
3
2.5
2
1.5
1
0.5
0
-50
-25
0 25 50 75 100 125 150
TC - Degrees Centigrade
3Pages | |||
ページ | 合計 : 4 ページ | ||
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部品番号 | 部品説明 | メーカ |
IXFP4N100P | Power MOSFET ( Transistor ) | IXYS Corporation |
IXFP4N100PM | Power MOSFET ( Transistor ) | IXYS Corporation |