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PDF IXFA4N100P Data sheet ( Hoja de datos )
| Número de pieza | IXFA4N100P | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | IXYS Corporation | |
| Logotipo |  |
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PolarTM HiPerFETTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
IXFA4N100P
IXFP4N100P
VDSS =
ID25 =
≤RDS(on)
1000V
4A
3.3Ω
TO-263 AA (IXFA)
Symbol
Test Conditions
VDSS
VDGR
VGSS
VGSM
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Continuous
Transient
ID25 TC = 25°C
IDM TC = 25°C, Pulse Width Limited by TJM
IA TC = 25°C
EAS TC = 25°C
dv/dt
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
PD TC = 25°C
TJ
TJM
Tstg
TL 1.6mm (0.062in.) from Case for 10s
Tsold Plastic Body for 10 Seconds
FMCd
Mounting Force (TO-263)
Mounting Torque (TO-220)
Weight
TO-263
TO-220
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Maximum Ratings
1000
1000
±20
±30
4
8
4
200
V
V
V
V
A
A
A
mJ
10
150
-55 ... +150
150
-55 ... +150
300
260
10.65 / 2.2..14.6
1.13 / 10
2.5
3.0
V/ns
W
°C
°C
°C
°C
°C
Nm/lb.in.
Nm/lb.in.
g
g
G
S
D (Tab)
TO-220AB (IXFP)
G
DS
D (Tab)
G = Gate
S = Source
D = Drain
Tab = Drain
Features
z International Standard Packages
z Low RDS(on) and QG
z Avalanche Rated
z Low Package Inductance
z Fast Intrinsic Rectifier
Advantages
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 250μA
IGSS VGS = ± 20V, VDS = 0V
IDSS VDS = VDSS, VGS= 0V
TJ = 125°C
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Notes 1
Characteristic Values
Min. Typ. Max.
1000
V
3.0 6.0 V
±100 nA
10 μA
750 μA
3.3 Ω
z High Power Density
z Easy to Mount
z Space Savings
Applications
z Switch-Mode and Resonant-Mode
Power Supplies
z DC-DC Converters
z Laser Drivers
z AC and DC Motor Drives
z Robotics and Servo Controls
© 2010 IXYS CORPORATION, All Rights Reserved
DS99921A(7/10)
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet IXFA4N100P.PDF ] | |
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