IXFP180N10T2 Datasheet PDF - IXYS Corporation
| Part Number | IXFP180N10T2 | |
| Description | Power MOSFET ( Transistor ) | |
| Manufacturers | IXYS Corporation | |
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There is a preview and IXFP180N10T2 download ( pdf file ) link at the bottom of this page. Total 6 Pages | ||
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Preliminary Technical Information
TrenchT2TM HiperFETTM
Power MOSFET
IXFA180N10T2
IXFP180N10T2
VDSS = 100V
ID25 = 180A
RDS(on) ≤ 6mΩ
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
Symbol
Test Conditions
VDSS
VDGR
VGSS
VGSM
ID25
ILRMS
IDM
IA
EAS
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C (Chip Capability)
Lead Current Limit, RMS
TC = 25°C, Pulse Width Limited by TJM
TC = 25°C
TC = 25°C
dv/dt
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C
PD TC = 25°C
TJ
TJM
Tstg
TL 1.6mm (0.062in.) from Case for 10s
Tsold Plastic Body for 10 Seconds
Md Mounting Torque (TO-220)
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Weight
TO-263
TO-220
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 250μA
IGSS VGS = ± 20V, VDS = 0V
IDSS VDS = VDSS, VGS= 0V
TJ = 150°C
RDS(on)
VGS = 10V, ID = 50A, Notes 1, 2
Maximum Ratings
100
100
V
V
±20 V
±30 V
180 A
120 A
450 A
90 A
750 mJ
15 V/ns
480 W
-55 ... +175
175
-55 ... +175
300
260
1.13 / 10
2.5
3.0
°C
°C
°C
°C
°C
Nm/lb.in.
g
g
Characteristic Values
Min. Typ. Max.
100 V
2.0 4.0 V
±100 nA
10 μA
750 μA
6 mΩ
TO-263 AA (IXFA)
G
S
D (Tab)
TO-220AB (IXFP)
GD S
D (Tab)
G = Gate
S = Source
D = Drain
Tab = Drain
Features
z International Standard Packages
z Avalanche Rated
z 175°C Operating Temperature
z High Current Handling Capability
z Fast Intrinsic Rectifier
z Low RDS(on)
Advantages
z Easy to Mount
z Space Savings
z High Power Density
Applications
z DC-DC Converters
z Battery Chargers
z Switch-Mode and Resonant-Mode
Power Supplies
z DC Choppers
z AC Motor Drives
z Uninterruptible Power Supplies
z High Speed Power Switching
Applications
© 2010 IXYS CORPORATION, All Rights Reserved
DS100266A(09/10)
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50
45
40
35
30
25
20
15
10
5
0
25
Fig. 13. Resistive Turn-on Rise Time vs.
Junction Temperature
RG = 2Ω , VGS = 10V
VDS = 50V
I D = 90A
I D = 45A
35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 15. Resistive Turn-on Switching Times vs.
Gate Resistance
20 26
19 t r
td(on) - - - - -
TJ = 125ºC, VGS = 10V
18 VDS = 50V
25
24
17 I D = 90A, 180A
16
23
22
15 21
14 20
13 19
2 3 4 5 6 7 8 9 10 11 12 13 14 15
RG - Ohms
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Fig. 17. Resistive Turn-off Switching Times vs.
Drain Current
17
50
t f td(off) - - - - -
16 RG = 2Ω, VGS = 10V
VDS = 50V
15
46
TJ = 125ºC
42
14 38
13
TJ = 25ºC
34
12 30
11
90
26
100 110 120 130 140 150 160 170 180
ID - Amperes
IXFA180N10T2
IXFP180N10T2
Fig. 14. Resistive Turn-on Rise Time vs.
Drain Current
55
50 RG = 2Ω , VGS = 10V
45 VDS = 50V
40 TJ = 25ºC
35
30
25
20
15
TJ = 125ºC
10
5
90 100 110 120 130 140 150 160 170
ID - Amperes
180
Fig. 16. Resistive Turn-off Switching Times vs.
Junction Temperature
19 46
18 t f
td(off) - - - - -
17 RG = 2Ω, VGS = 10V
VDS = 50V
16
44
42
40
15 I D = 90A
14
13
I D = 180A
38
36
34
12 32
11 30
10 28
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 18. Resistive Turn-off Switching Times vs.
Gate Resistance
17 46
t f td(off) - - - - -
16 TJ = 125ºC, VGS = 10V
VDS = 50V
44
15 42
14 40
I D = 180A, 90A
13 38
12 36
2 3 4 5 6 7 8 9 10 11 12 13 14 15
RG - Ohms
© 2010 IXYS CORPORATION, All Rights Reserved
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