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Número de pieza | IXFA130N10T | |
Descripción | Power MOSFET ( Transistor ) | |
Fabricantes | IXYS Corporation | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IXFA130N10T (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! Preliminary Technical Information
TrenchMVTM Power
MOSFET HiperFETTM
N-Channel Enhancement Mode
Avalanche Rated
Fast intrisic diode
IXFA130N10T
IXFP130N10T
VDSS =
ID25 =
RDS(on) ≤
100V
130A
9.1mΩ
TO-263 (IXFA)
Symbol
VDSS
VGSM
ID25
ILRMS
IDM
IA
EAS
PD
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 175°C
Transient
TC = 25°C
Lead Current Limit, RMS
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
1.6mm (0.062 in.) from case for 10s
Plastic body for 10 seconds
Mounting torque (TO-220)
TO-220
TO-263
Maximum Ratings
100
± 30
130
75
350
V
V
A
A
A
65 A
750 mJ
360 W
-55 ... +175
175
-55 ... +175
°C
°C
°C
300 °C
260 °C
1.13 / 10
Nm/lb.in.
3.0 g
2.5 g
G
S
TO-220 (IXFP)
(TAB)
GD S
(TAB)
G = Gate D = Drain
S = Source TAB = Drain
Features
z Ultra-low On Resistance
z Unclamped Inductive Switching (UIS)
rated
z Low package inductance
- easy to drive and to protect
z 175 °C Operating Temperature
z Fast intrinsic diode
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Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 1mA
IGSS VGS = ± 20V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
TJ = 150°C
RDS(on)
VGS = 10V, ID = 25A, Notes 1, 2
Characteristic Values
Min. Typ. Max.
100
V
2.5 4.5 V
± 200 nA
10 μA
500 μA
9.1 mΩ
Advantages
z Easy to mount
z Space savings
z High power density
Applications
z Automotive
- Motor Drives
- 42V Power Bus
- ABS Systems
z DC/DC Converters and Off-line UPS
z Primary Switch for 24V and 48V
Systems
z Distributed Power Architechtures
and VRMs
z Electronic Valve Train Systems
z High Current Switching
Applications
z High Voltage Synchronous Recifier
© 2008 IXYS CORPORATION, All rights reserved
DS100020(07/08)
1 page Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
65
60 RG = 5Ω
VGS = 10V
55 VDS = 50V
50
45
40
I D = 50A
35
30 I D = 25A
25
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
130
120 t r
td(on) - - - -
110 TJ = 125ºC, VGS = 10V
100
VDS = 50V
90 I D = 50A
80
70
60
50
40
30
20
4
6
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8 10 12 14
RG - Ohms
53
50
47
44
41
I D = 25A
38
35
32
29
26
23
20
16 18 20
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
40
38
36
34 t f
td(off) - - - -
RG = 5Ω, VGS = 10V
32 VDS = 50V
30
TJ = 125ºC
28 TJ = 25ºC
26
24
25
30 35 40
ID - Amperes
45
70
66
62
58
54
50
46
42
38
50
© 2008 IXYS CORPORATION, All rights reserved
IXFA130N10T
IXFP130N10T
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
62
58 RG = 5Ω
VGS = 10V
54 VDS = 50V
50
46
TJ = 25ºC
42
38
34
30 TJ = 125ºC
26
22
25
30 35 40
ID - Amperes
45
50
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
40
t f td(off) - - - -
38 RG = 5Ω, VGS = 10V
VDS = 50V
36
34
I D = 25A
68
64
60
56
32
30 I D = 50A
52
48
28 44
26 40
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
100
90 t r
td(on) - - - -
TJ = 125ºC, VGS = 10V
80 VDS = 50V
25A < I D < 50A
170
150
130
70
I D = 25A
60
110
90
50
I D = 50A
70
40 50
30 30
4 6 8 10 12 14 16 18 20
RG - Ohms
IXYS REF: T_130N10T (4V)07-29-08-A
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet IXFA130N10T.PDF ] |
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