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PDF IXFP12N50PM Data sheet ( Hoja de datos )
| Número de pieza | IXFP12N50PM | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | IXYS Corporation | |
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PolarTM Power MOSFET
HiPerFETTM
(Electrically Isolated Tab)
IXFP12N50PM
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
Test Conditions
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
IS ≤ IDM, VDD ≤ VDSS, TJ =150°C
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque
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Maximum Ratings
500
500
V
V
± 30 V
± 40 V
6A
30 A
12 A
600 mJ
10 V/ns
50 W
- 55 ... +150
150
- 55 ... +150
°C
°C
°C
300
260
1.13/10
2.5
°C
°C
Nm/lb.in.
g
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
BVDSS
VGS(th)
VGS = 0V, ID = 250μA
VDS = VGS, ID = 1mA
IGSS VGS = ±30V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
RDS(on)
VGS = 10V, ID = 6A, Note 1
TJ = 125°C
Characteristic Values
Min. Typ. Max.
500 V
3.0 5.5 V
±100 nA
5 μA
250 μA
500 mΩ
VDSS =
ID25 =
RDS(on) ≤
trr ≤
500V
6A
500mΩ
300ns
OVERMOLDED TO-220
(IXFP...M) OUTLINE
G DS
G = Gate
S = Source
Isolated Tab
D = Drain
Features
Plastic overmolded tab for electrical
isolation
International standard package
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Advantages
Easy to mount
Space savings
© 2008 IXYS CORPORATION, All rights reserved
DS99510F(04/08)
1 page  
IXFP12N50PM
10.00
Fig. 13. Maximum Transient Thermal Impedance
1.00
0.10
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
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© 2008 IXYS CORPORATION, All rights reserved
IXYS REF: T_12N50P(4J)4-14-08-D
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet IXFP12N50PM.PDF ] | |
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