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PDF IXFP110N15T2 Data sheet ( Hoja de datos )
| Número de pieza | IXFP110N15T2 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | IXYS Corporation | |
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Preliminary Technical Information
TrenchT2TM HiperFET
Power MOSFET
IXFA110N15T2
IXFP110N15T2
VDSS =
ID25 =
RDS(on) ≤
150V
110A
13mΩ
N-Channel Enhancement Mode
Avalanche Rated
TO-263
Symbol
Test Conditions
VDSS
VDGR
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGS = 1MΩ
VGSS
VGSM
ID25
IDM
IA
EAS
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
dV/dt
PD
TJ
TJM
Tstg
IS ≤ IDM,, VDD ≤ VDSS,TJ ≤ 175°C
TC = 25°C
TL 1.6mm (0.062in.) from case for 10s
Tsold Plastic body for 10 seconds
Md Mounting torque (TO-220)
Weight
TO-263
TO-220www.DataSheet4U.net
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 250μA
IGSS VGS = ± 20V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
TJ = 150°C
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Notes 1, 2
© 2008 IXYS CORPORATION, All rights reserved
Maximum Ratings
150
150
V
V
± 20 V
± 30 V
110 A
300 A
50 A
800 mJ
15
480
-55 ... +175
175
-55 ... +175
V/ns
W
°C
°C
°C
300
260
1.13 / 10
2.5
3.0
°C
°C
Nm/lb.in.
g
g
Characteristic Values
Min. Typ. Max.
150 V
2.5 4.5 V
±200 nA
5 μA
150 μA
11 13 mΩ
G
S
TO-220
(TAB)
GD S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z International standard packages
z 175°C Operating Temperature
z High current handling capability
z Fast intrinsic Rectifier
z Dynamic dV/dt rated
z Low RDS(on)
Advantages
z Easy to mount
z Space savings
z High power density
Applications
z DC-DC converters
z Battery chargers
z Switched-mode and resonant-mode
power supplies
z DC choppers
z AC motor drives
z Uninterruptible power supplies
z High speed power switching
applications
DS100093(12/08)
1 page  
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
20
19
RG = 3.3Ω
VGS = 10V
18 VDS = 75V
17
16 I D = 110A
15
I D = 55A
14
13
12
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
280
240
t r td(on) - - - -
TJ = 125ºC, VGS = 10V
200
VDS = 75V
160 I D = 110A
90
80
70
60
120 50
I D = 55A
80 40
40 30
0
2 4 6 8 10 12 14 16 18
RG - Ohms
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Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
23
t f td(off) - - - -
22 RG = 3.3Ω, VGS = 10V
VDS = 75V
21
20
20
80
70
60
20 TJ = 125ºC
19
TJ = 25ºC
50
40
18 30
17 20
55 60 65 70 75 80 85 90 95 100 105 110
ID - Amperes
IXFA110N15T2
IXFP110N15T2
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
20
RG = 3.3Ω
19 VGS = 10V
VDS = 75V
18 TJ = 125ºC
17
16 TJ = 25ºC
15
14
55 60 65 70 75 80 85 90 95 100 105 110
ID - Amperes
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
28 80
t f td(off) - - - -
26 RG = 3.3Ω, VGS = 10V
VDS = 75V
24
70
60
22 50
I D = 55A, 110A
20 40
18 30
16 20
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
120 250
t f td(off) - - - -
100 TJ = 125ºC, VGS = 10V
VDS = 75V
210
80 170
60 I D = 55A
130
40 90
I D = 110A
20 50
0 10
2 4 6 8 10 12 14 16 18 20
RG - Ohms
© 2008 IXYS CORPORATION, All rights reserved
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet IXFP110N15T2.PDF ] | |
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