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PDF IXFH102N15T Data sheet ( Hoja de datos )
| Número de pieza | IXFH102N15T | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | IXYS Corporation | |
| Logotipo |  |
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Trench Gate Power
MOSFET HiperFETTM
N-Channel Enhancement Mode
Avalanche Rated
IXFA102N15T
IXFH102N15T
IXFP102N15T
VDSS =
ID25 =
RDS(on) ≤
trr ≤
150V
102A
18mΩ
120ns
TO-263 (IXFA)
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
VGSS
VGSM
TJ = 25°C to 175°C
TJ = 25°C to 175°C RGS = 1MΩ
Continuous
Transient
150 V
150 V
± 20 V
± 30 V
ID25
ILRMS
IDM
TC = 25°C
Lead Current Limit, RMS
TC = 25°C, Pulse Width Limited by TJM
102 A
75 A
300 A
IA TC = 25°C
EAS TC = 25°C
51 A
750 mJ
dV/dt
IS ≤ IDM, VDD ≤ VDSS , TJ ≤ 175°C
20 V/ns
PD TC = 25°C
455 W
TJ
-55 ... +175
°C
TJM 175 °C
Tstg
-55 ... +175
°C
TL
TSOLD
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10 seconds
300
260
FMCd
Mounting Torque
Mounting Forcewww.DataSheet4U.net
(TO-220 & TO-247)
1.13 / 10
(TO-263)
10..65 / 2.2..14.6
°C
°C
Nmlb.in.
N/lb.
Weight
TO-263
TO-220
TO-247
2.5 g
3.0 g
6.0 g
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 1mA
IGSS VGS = ± 20V, VDS = 0V
IDSS VDS = VDSS, VGS= 0V
TJ = 150°C
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
Characteristic Values
Min. Typ.
Max.
150 V
2.5 5.0 V
± 200 nA
5 μA
750 μA
18 mΩ
GS
TO-220 (IXFP)
(TAB)
G DS
TO-247 (IXFH)
(TAB)
GD S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z International Standard Packages
z Avalanche Rated
Advantages
z Easy to Mount
z Space Savings
z High Power Density
Applications
z DC-DC Converters
z Battery Chargers
z Switched-Mode and Resonant-Mode
Power Supplies
z DC Choppers
z AC Motor Drives
z Uninterruptible Power Supplies
z High Speed Power Switching
Applications
© 2009 IXYS CORPORATION, All Rights Reserved
DS100045A(04/09)
1 page  
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
19
18 RG = 3.3Ω
17 VGS = 10V
VDS = 75V
16
15 I D = 102A
14
13 I D = 51A
12
11
10
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
100
90 t r
td(on) - - - -
80 TJ = 125ºC, VGS = 10V
VDS = 75V
70
I D = 102A
60
50
40
30 I D = 51A
20
10
0
2 4 6 8 10 12 14 16 18
RG - Ohms
www.DataSheet4U.net
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
26
32
30
28
26
24
22
20
18
16
14
12
20
42
25
24 t f
td(off) - - - -
RG = 3.3Ω, VGS = 10V
23 VDS = 75V
22
TJ = 125ºC
38
34
30
26
21 22
TJ = 25ºC
20 18
50 55 60 65 70 75 80 85 90 95 100 105
ID - Amperes
IXFA102N15T IXFH102N15T
IXFP102N15T
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
18
RG = 3.3Ω
17 VGS = 10V
VDS = 75V
TJ = 125ºC
16
15
14
TJ = 25ºC
13
12
50 55 60 65 70 75 80 85 90 95 100 105
ID - Amperes
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
30 40
29 t f
td(off) - - - -
28 RG = 3.3Ω, VGS = 10V
27 VDS = 75V
38
36
34
26 32
25 I D = 51A
24
30
28
23 26
22
21 I D = 102A
24
22
20 20
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
280
t f td(off) - - - -
240 TJ = 125ºC, VGS = 10V
VDS = 75V
200
160
140
120
160 I D = 102A
100
120 80
I D = 51A
80 60
40 40
0 20
2 4 6 8 10 12 14 16 18 20
RG - Ohms
© 2009 IXYS CORPORATION, All Rights Reserved
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet IXFH102N15T.PDF ] | |
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