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PDF IXFP05N100M Data sheet ( Hoja de datos )
| Número de pieza | IXFP05N100M | |
| Descripción | High Voltage HiperFET | |
| Fabricantes | IXYS Corporation | |
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Preliminary Technical Information
High Voltage HiperFET IXFP05N100M
(Electrically Isolated Tab)
VDSS
ID25
=
=
RDS(on) ≤
trr ≤
1000V
700mA
17Ω
300ns
N-Channel Enhancement Mode
Avalanche Rated
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1 MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
IS ≤ IDM, VDD ≤ VDSS, TJ =150°C
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque
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Maximum Ratings
1000
1000
V
V
± 30 V
± 40 V
700
3
1
100
5
25
- 55 ... +150
150
- 55 ... +150
mA
A
A
mJ
V/ns
W
°C
°C
°C
300
260
1.13/10
2.5
°C
°C
Nm/lb.in.
g
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
BVDSS
VGS(th)
VGS = 0V, ID = 250μA
VDS = VGS, ID = 250μA
IGSS VGS = ±30V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
TJ = 125°C
RDS(on)
VGS = 10V, ID = 375mA, Note 1
Characteristic Values
Min. Typ. Max.
1000
2.5
V
4.5 V
±100 nA
25 μA
500 μA
15 17 Ω
OVERMOLDED TO-220
(IXFP...M) OUTLINE
G DS
G = Gate
S = Source
Isolated Tab
D = Drain
Features
Plastic overmolded tab for electrical
isolation
International standard package
Avalanche rated
Low package inductance
Advantages
Easy to mount
Space savings
High power density
© 2008 IXYS CORPORATION, All rights reserved
DS100069(11/08)
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet IXFP05N100M.PDF ] | |
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