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PDF PSMN2R0-30PL Data sheet ( Hoja de datos )
| Número de pieza | PSMN2R0-30PL | |
| Descripción | N-channel logic level MOSFET | |
| Fabricantes | NXP Semiconductors | |
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PSMN2R0-30PL
N-channel 30 V 2.1 mΩ logic level MOSFET
Rev. 01 — 24 June 2009
Product data sheet
1. Product profile
www.DataSheet4U.net
1.1 General description
Logic level N-channel MOSFET in TO220 package qualified to 175 °C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
High efficiency due to low switching
and conduction losses
Suitable for logic level gate drive
sources
1.3 Applications
DC-to-DC converters
Load switiching
Motor control
Server power supplies
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
Min Typ Max Unit
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
- - 30 V
ID drain current
Tmb = 25 °C; VGS = 10 V; [1] - - 100 A
see Figure 1
Ptot total power
dissipation
Tmb = 25 °C; see Figure 2
- - 211 W
Dynamic characteristics
QGD
QG(tot)
gate-drain charge
total gate charge
VGS = 4.5 V; ID = 25 A;
VDS = 12 V; see Figure 13;
see Figure 14
- 16 - nC
- 55 - nC
Static characteristics
RDSon drain-source
on-state resistance
VGS = 4.5 V; ID = 15 A;
Tj = 25 °C
VGS = 10 V; ID = 15 A;
Tj = 25 °C; see Figure 12
-
[2] -
2 2.8 mΩ
1.7 2.1 mΩ
[1] Continuous current is limited by package.
[2] Measured 3 mm from package.
1 page  
NXP Semiconductors
PSMN2R0-30PL
N-channel 30 V 2.1 mΩ logic level MOSFET
6. Characteristics
Table 6. Characteristics
Symbol Parameter
Conditions
Min Typ Max Unit
Static characteristics
V(BR)DSS
VGS(th)
drain-source
breakdown voltage
gate-source threshold
voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
ID = 250 µA; VGS = 0 V; Tj = -55 °C
ID = 1 mA; VDS = VGS; Tj = 25 °C;
see Figure 9; see Figure 10
30 - - V
27 - - V
1.3 1.7 2.15 V
ID = 1 mA; VDS = VGS; Tj = 175 °C;
see Figure 10
0.5 - - V
ID = 1 mA; VDS = VGS; Tj = -55 °C;
see Figure 10
- - 2.45 V
IDSS
IGSS
RDSon
drain leakage current
gate leakage current
drain-source on-state
resistance
VDS = 30 V; VGS = 0 V; Tj = 25 °C
VDS = 30 V; VGS = 0 V; Tj = 125 °C
VGS = 16 V; VDS = 0 V; Tj = 25 °C
VGS = -16 V; VDS = 0 V; Tj = 25 °C
VGS = 4.5 V; ID = 15 A; Tj = 25 °C
VGS = 10 V; ID = 15 A; Tj = 100 °C;
see Figure 11
- - 3 µA
- - 70 µA
- - 100 nA
- - 100 nA
- 2 2.8 mΩ
- - 3 mΩ
VGS = 10 V; ID = 15 A; Tj = 25 °C;
see Figure 12
[2] -
1.7 2.1 mΩ
RG gate resistance
Dynamic characteristics
f = 1 MHz
- 0.78 - Ω
QG(tot)
total gate charge
ID = 25 A; VDS = 12 V; VGS = 10 V;
see Figure 13; see Figure 14
- 117 - nC
ID = 25 A; VDS = 12 V; VGS = 4.5 V;
see Figure 13; see Figure 14
- 55 - nC
QGS
QGS(th)www.DataSheet4U.net
gate-source charge
pre-threshold
gate-source charge
ID = 25 A; VDS = 12 V; VGS = 4.5 V;
see Figure 13; see Figure 14
- 17 - nC
- 11 - nC
QGS(th-pl) post-threshold
gate-source charge
- 6 - nC
QGD
VGS(pl)
gate-drain charge
gate-source plateau
voltage
VDS = 12 V; see Figure 13; see Figure 14
- 16 - nC
- 2.6 - V
Ciss
Coss
Crss
input capacitance
output capacitance
reverse transfer
capacitance
VDS = 12 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; see Figure 15
- 6810 - pF
- 1410 - pF
- 650 - pF
td(on)
tr
td(off)
tf
turn-on delay time
rise time
turn-off delay time
fall time
VDS = 12 V; RL = 0.5 Ω; VGS = 4.5 V;
RG(ext) = 4.7 Ω
- 63 - ns
- 125 - ns
- 111 - ns
- 59 - ns
PSMN2R0-30PL_1
Product data sheet
Rev. 01 — 24 June 2009
© NXP B.V. 2009. All rights reserved.
5 of 13
5 Page 
NXP Semiconductors
PSMN2R0-30PL
N-channel 30 V 2.1 mΩ logic level MOSFET
8. Revision history
Table 7. Revision history
Document ID
Release date
PSMN2R0-30PL_1
20090624
Data sheet status
Product data sheet
Change notice
-
Supersedes
-
www.DataSheet4U.net
PSMN2R0-30PL_1
Product data sheet
Rev. 01 — 24 June 2009
© NXP B.V. 2009. All rights reserved.
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