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PDF IXFQ24N50P2 Data sheet ( Hoja de datos )
| Número de pieza | IXFQ24N50P2 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | IXYS Corporation | |
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Advance Technical Information
PolarP2TM HiperFETTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFQ24N50P2
VDSS
ID25
RDS(on)
trr(typ)
=
=
≤
≤
500V
24A
270mΩ
200ns
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, Pulse Width Limited by TJM
TC = 25°C
TC = 25°C
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
TC = 25°C
Maximum Lead Temperature for Soldering
Plastic Body for 10s
Mounting Torque
Maximum Ratings
500
500
V
V
± 30 V
± 40 V
24 A
50 A
12 A
750 mJ
15 V/ns
480 W
-55 ... +150
150
-55 ... +150
300
260
°C
°C
°C
°C
°C
1.13/10
5.5
Nm/lb.in.
g
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Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 1mA
IGSS VGS = ± 30V, VDS = 0V
IDSS VDS = VDSS, VGS= 0V
TJ = 125°C
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
Characteristic Values
Min. Typ. Max.
500 V
2.5 4.5 V
± 100 nA
25 μA
1 mA
270 mΩ
TO-3P
G
D
S
G = Gate
S = Source
Tab
D = Drain
Tab = Drain
Features
z Avalanche Rated
z Fast Intrinsic Diode
z Dynamic dv/dt Rated
z Low Package Inductance
Advantages
z High Power Density
z Easy to Mount
z Space Savings
Applications
z Switch-Mode and Resonant-Mode
Power Supplies
z DC-DC Converters
z Laser Drivers
z AC and DC Motor Drives
z Robotics and Servo Controls
© 2010 IXYS CORPORATION, All Rights Reserved
DS100271(06/10)
1 page  
1
0.1
0.01
0.001
0.00001
IXFQ24N50P2
Fig. 13. Maximum Transient Thermal Impedance
0.0001
0.001
0.01
Pulse Width - Second
0.1
1
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© 2010 IXYS CORPORATION, All Rights Reserved
IXYS REF: F_24N50P2(57-N45)6-03-10-A
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet IXFQ24N50P2.PDF ] | |
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