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PDF IXFP7N80PM Data sheet ( Hoja de datos )
| Número de pieza | IXFP7N80PM | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | IXYS Corporation | |
| Logotipo |  |
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PolarHVTM HiPerFET
Power MOSFET
(Electrically Isolated Tab)
IXFP7N80PM
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
VDSS = 800 V
ID25 = 3.5 A
RDS(on) ≤ 1.44 Ω
trr ≤ 250 ns
Symbol
V
DSS
VDGR
VGSS
V
GSM
ID25
IDM
IAR
EAR
EAS
dv/dt
P
D
TJ
TJM
T
stg
T
L
TSOLD
www.DataSheet4U.net
Md
Weight
Test Conditions
T
J
= 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 10 Ω
T
C
= 25°C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque
Maximum Ratings
800 V
800 V
OVERMOLDED TO-220
(IXTP...M) OUTLINE
± 30 V
± 40 V
3.5 A
18 A
4A
20 mJ
300 mJ
10 V/ns
G DS
Isolated Tab
G = Gate
S = Source
D = Drain
50
-55 ... +150
150
-55 ... +150
300
260
W
°C
°C
°C
°C
°C
1.13/10 Nm/lb.in.
3.0 g
Features
z Plastic overmolded tab for electrical
isolation
z Fast intrinsic diode
z International standard package
z Unclamped Inductive Switching (UIS)
rated
z Low package inductance
- easy to drive and to protect
Symbol
Test Conditions
(T
J
=
25°C,
unless
otherwise
specified)
BVDSS
VGS = 0 V, ID = 250 μA
VGS(th)
VDS = VGS, ID = 1 mA
I
GSS
V
GS
=
±30
V,
V
DS
=
0
V
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
VGS = 10 V, ID = 3.5 A
Note 1
Characteristic Values
Min. Typ. Max.
800 V
3.0 5.0 V
Advantages
z Easy to mount
z Space savings
z High power density
±100 nA
TJ = 125°C
25 μA
500 μA
1.44 Ω
© 2006 IXYS All rights reserved
DS99598E(08/06)
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet IXFP7N80PM.PDF ] | |
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