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PDF IXFP7N80P Data sheet ( Hoja de datos )
| Número de pieza | IXFP7N80P | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | IXYS Corporation | |
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PolarTM HiPerFETTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
IXFA7N80P
IXFP7N80P
VDSS = 800V
ID25 = 7A
RDS(on) ≤ 1.44Ω
trr ≤ 250ns
TO-263 AA (IXFA)
Symbol
Test Conditions
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, Pulse Width Limited by TJM
TC = 25°C
TC = 25°C
dv/dt
PD
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
TC = 25°C
TJ
TJM
Tstg
TL 1.6mm (0.062in.) from Case for 10s
Tsold Plastic Body for 10 Seconds
Md Mounting Torque (TO-220)
Weight TO-263www.DataSheet4U.net
TO-220
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 1mA
IGSS VGS = ± 30V, VDS = 0V
IDSS VDS = VDSS, VGS = 0V
TJ = 125°C
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Notes 1, 2
Maximum Ratings
800
800
V
V
±30 V
±40 V
7A
18 A
4A
300 mJ
10
200
-55 ... +150
150
-55 ... +150
300
260
1.13 / 10
2.5
3.0
V/ns
W
°C
°C
°C
°C
°C
Nm/lb.in.
g
g
Characteristic Values
Min. Typ. Max.
800 V
3.0 5.0 V
±100 nA
25 μA
500 μA
1.44 Ω
G
S
D (Tab)
TO-220AB (IXFP)
GD S
D (Tab)
G = Gate
S = Source
D = Drain
Tab = Drain
Features
z International Standard Packages
z Dynamic dv/dt Rating
z Avalanche Rated
z Fast Intrinsic Rectifier
z Low QG
Advantages
z Easy to Mount
z Space Savings
Applications
z DC-DC Converters
z Battery Chargers
z Switch-Mode and Resonant-Mode
Power Supplies
z Uninterrupted Power Supplies
z AC Motor Drives
z High Speed Power Switching
Applications
© 2010 IXYS CORPORATION, All Rights Reserved
DS99597F(04/10)
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet IXFP7N80P.PDF ] | |
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